发文地区与机构
近年国家 / 地区发文量统计
| 国家 / 地区 | 发文量 |
|---|---|
| USA | 331 |
| CHINA MAINLAND | 200 |
| France | 185 |
| Italy | 105 |
| Switzerland | 95 |
| Japan | 78 |
| GERMANY (FED REP GER) | 53 |
| South Korea | 44 |
| England | 41 |
| Russia | 37 |
近年机构发文量统计
| 机构 | 发文量 |
|---|---|
| UNITED STATES DEPARTMENT OF ENERGY (DOE... | 105 |
| CHINESE ACADEMY OF SCIENCES | 100 |
| VANDERBILT UNIVERSITY | 93 |
| CENTRE NATIONAL DE LA RECHERCHE SCIENTI... | 80 |
| EUROPEAN ORGANIZATION FOR NUCLEAR RESEA... | 76 |
| CEA | 73 |
| ISTITUTO NAZIONALE DI FISICA NUCLEARE (... | 58 |
| UNIVERSITE DE TOULOUSE | 34 |
| UNIVERSITE DE MONTPELLIER | 31 |
| UNITED STATES DEPARTMENT OF DEFENSE | 29 |
文章引用情况
1
Measurement and Mechanism Investigation of Negative and Positive Muon-Induced Upsets in 65-nm Bulk SRAMs2
Impact of Thermal and Intermediate Energy Neutrons on SRAM SEE Rates in the LHC Accelerator3
A New Analytical Tool for the Study of Radiation Effects in 3-D Integrated Circuits: Near-Zero Field Magnetoresistance Spectroscopy4
On the Efficacy of ECC and the Benefits of FinFET Transistor Layout for GPU Reliability5
Ultraenergetic Heavy-Ion Beams in the CERN Accelerator Complex for Radiation Effects Testing6
Single-Event Damage Observed in GaN-on-Si HEMTs for Power Control Applications7
Design and Status of the Mu2e Crystal Calorimeter8
SEE Tests With Ultra Energetic Xe Ion Beam in the CHARM Facility at CERN9
Gate Bias and Length Dependences of Total Ionizing Dose Effects in InGaAs FinFETs on Bulk Si10
Development of a Very Low-Noise Cryogenic Preamplifier for Large-Area SiPM Devices