发文地区与机构
近年国家 / 地区发文量统计
| 国家 / 地区 | 发文量 |
|---|---|
| USA | 368 |
| Japan | 77 |
| GERMANY (FED REP GER) | 61 |
| South Korea | 56 |
| France | 44 |
| Sweden | 33 |
| CHINA MAINLAND | 31 |
| England | 29 |
| Finland | 26 |
| Netherlands | 26 |
近年机构发文量统计
| 机构 | 发文量 |
|---|---|
| UNITED STATES DEPARTMENT OF ENERGY (DOE... | 58 |
| CENTRE NATIONAL DE LA RECHERCHE SCIENTI... | 30 |
| UNITED STATES DEPARTMENT OF DEFENSE | 26 |
| LINKOPING UNIVERSITY | 25 |
| UNIVERSITY OF ILLINOIS SYSTEM | 24 |
| UNIVERSITY OF CALIFORNIA SYSTEM | 20 |
| CEA | 18 |
| UNIVERSITY OF TEXAS SYSTEM | 17 |
| UNIVERSITY SYSTEM OF MARYLAND | 17 |
| LAM RESEARCH CORPORATION | 16 |
文章引用情况
1
Rapid atomic layer etching of Al2O3 using sequential exposures of hydrogen fluoride and trimethylaluminum with no purging2
High-rate sputter deposition of electrochromic nickel oxide thin films using substrate cooling and water vapor injection3
Real-time in situ ellipsometric monitoring of aluminum nitride film growth via hollow-cathode plasma-assisted atomic layer deposition4
Downstream etching of silicon nitride using continuous-wave and pulsed remote plasma sources sustained in Ar/NF3/O-2 mixtures5
Chemistry and kinetics governing hydride/chloride chemical vapor deposition of epitaxial Ge1-xSnx6
Seamless fill of deep trenches by chemical vapor deposition: Use of a molecular growth inhibitor to eliminate pinch-off7
Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma8
Study of Ge-rich GeSbTe etching process with different halogen plasmas9
Tuning of material properties of ZnO thin films grown by plasma-enhanced atomic layer deposition at room temperature10
Review Article: Quantum-based vacuum metrology at the National Institute of Standards and Technology