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Materials Science In Semiconductor Processing

Materials Science In Semiconductor Processing杂志,由Elsevier Ltd出版,于1998年创刊,Bimonthly,出版语言English,ISSN:1369-8001,E-ISSN:1873-4081。

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Materials Science In Semiconductor Processing
Materials Science In Semiconductor Processing
Materials Science In Semiconductor Processing
SCI SCIE EI

杂志介绍

JCR分区
Q1
中科院分区
3区
影响因子
5.2
CiteScore
8.7
期刊收录
SCI、SCIE、EI

Materials Science In Semiconductor Processing(中文译名:《半导体加工中的材料科学》),ISSN:1369-8001,EISSN:1873-4081,是Elsevier Ltd出版的国际性学术期刊,创刊于1998年,以Bimonthly形式稳定发行,2026年总发文量约967篇。该刊采用非OA开放访问,学科归属为工程技术 - 材料科学:综合。该刊是材料科学、工程电子与电气领域的国际权威刊物,已被SCI(科学引文索引)、SCIE(科学引文索引扩展版)、EI(工程索引)等国际主流学术数据库收录。2026年期刊影响因子达5.2,2025年期刊CiteScore为8.7,2025年期刊自引率约3.8%,在中科院期刊分区体系中位列材料科学大类3区,在所属学科领域具备高学术影响力与国际认可度。Materials Science In Semiconductor Processing长期聚焦材料科学、工程电子与电气及相关产业的技术应用前沿,平均审稿周期约1.7个月,审稿流程高效稳定。在稿件录用评判中,该刊将创新性与前沿性作为核心遴选标准,重点收录能够对材料科学、工程电子与电气领域的落地与发展产生实质性推动价值的研究成果。

从全球发文格局来看,CHINA MAINLANDIndia、South Korea、Turkey、Mexico、Japan、Iran等为核心发文国家与地区;

期刊评价

名词解释:

影响因子(Impact Factor, IF):指该期刊前两年发表的文章,在第三年的平均被引用次数。它反映了期刊的近期平均影响力和热度。

中科院分区:中科院分区表是国内主流的学术期刊分级评价工具,核心意义是建立跨学科可比的统一评价标尺,为职称评审、学位授予、科研立项等科研管理工作提供标准化量化依据,同时帮助科研人员筛选优质期刊、规避学术风险,适配国内本土化的科研评价需求。

期刊分区表

《新锐期刊分区表》(2026年3月发布)

大类学科 小类学科 Top期刊 综述期刊
材料科学
3区
ENGINEERING, ELECTRICAL & ELECTRONIC 工程:电子与电气 MATERIALS SCIENCE, MULTIDISCIPLINARY 材料科学:综合 PHYSICS, APPLIED 物理:应用 PHYSICS, CONDENSED MATTER 物理:凝聚态物理
3区 3区 3区 3区

期刊分区表(2025年3月升级版)

大类学科 小类学科 Top期刊 综述期刊
材料科学
3区
PHYSICS, CONDENSED MATTER 物理:凝聚态物理 ENGINEERING, ELECTRICAL & ELECTRONIC 工程:电子与电气 MATERIALS SCIENCE, MULTIDISCIPLINARY 材料科学:综合 PHYSICS, APPLIED 物理:应用
2区 3区 3区 3区

期刊分区表(2023年12月升级版)

大类学科 小类学科 Top期刊 综述期刊
工程技术
3区
ENGINEERING, ELECTRICAL & ELECTRONIC 工程:电子与电气 MATERIALS SCIENCE, MULTIDISCIPLINARY 材料科学:综合 PHYSICS, APPLIED 物理:应用 PHYSICS, CONDENSED MATTER 物理:凝聚态物理
3区 3区 3区 3区

JCR分区

2025-2026年最新版

按JCI指标学科分区 收录子集 分区 排名 百分位
学科:ENGINEERING, ELECTRICAL & ELECTRONIC SCIE Q1 85 / 369

77.1

学科:MATERIALS SCIENCE, MULTIDISCIPLINARY SCIE Q2 165 / 472

65.1

学科:PHYSICS, APPLIED SCIE Q1 46 / 191

76.2

学科:PHYSICS, CONDENSED MATTER SCIE Q2 24 / 81

71

学科:ENGINEERING, ELECTRICAL & ELECTRONIC SCIE Q2 123 / 371

66.98

学科:MATERIALS SCIENCE, MULTIDISCIPLINARY SCIE Q2 143 / 473

69.87

学科:PHYSICS, APPLIED SCIE Q2 51 / 191

73.56

学科:PHYSICS, CONDENSED MATTER SCIE Q1 19 / 81

77.16

2024-2025年最新版

按JCI指标学科分区 收录子集 分区 排名 百分位
学科:ENGINEERING, ELECTRICAL & ELECTRONIC SCIE Q2 96 / 368

74

学科:MATERIALS SCIENCE, MULTIDISCIPLINARY SCIE Q2 161 / 461

65.2

学科:PHYSICS, APPLIED SCIE Q2 52 / 187

72.5

学科:PHYSICS, CONDENSED MATTER SCIE Q2 25 / 80

69.4

学科:ENGINEERING, ELECTRICAL & ELECTRONIC SCIE Q2 124 / 368

66.44

学科:MATERIALS SCIENCE, MULTIDISCIPLINARY SCIE Q2 146 / 463

68.57

学科:PHYSICS, APPLIED SCIE Q2 52 / 187

72.46

学科:PHYSICS, CONDENSED MATTER SCIE Q1 19 / 80

76.88


中国学者近期发文

1
Cost-effective fabrication of K0.5Na0.5NbO3-based single crystals with superior piezoelectric and dielectric stability via simple seed-free solid-state crystal growth and doping technologie

Author:Di, Yiming; Wei, Wenqi; Chen, Zerong; Jiang, Minhong

Journal: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 2026; Vol. 210, Issue , pp. -. DOI: 10.1016/j.mssp.2026.110652

2
From deposition kinetics to electrochromics: Phase-field simulation unveils the superiority of amorphous MoO3-x microstructure

Author:Lin, Yu; Liu, Zhe; Cheng, Ao; Wang, Cheng; Zhan, Runze; Tang, Shuai; Chen, Huanjun; Liu, Fei; She, Juncong; Chen, Jun; Shen, Yan; Deng, Shaozhi

Journal: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 2026; Vol. 210, Issue , pp. -. DOI: 10.1016/j.mssp.2026.110661

3
GeS2-photogated WSe2 ambipolar photodetectors with fast response for self-powered operatio

Author:Wang, Ningning; Wang, Xinying; Mi, Jiao; Yang, Liyun; Huang, Hailin; Su, Ran; Wang, Baozhu; Zhou, Xinrong; Li, Shuai; Wang, Siyu; Xu, Guoliang; An, Xingtao

Journal: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 2026; Vol. 210, Issue , pp. -. DOI: 10.1016/j.mssp.2026.110659

4
Study on the influence of material properties on thermal stress in tapered TSV

Author:Song, Jinhao; Ma, Dandan; Xia, Guodong; Ren, Pengyan; Chen, Yongchang

Journal: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 2026; Vol. 210, Issue , pp. -. DOI: 10.1016/j.mssp.2026.110663

5
HF-based metal-assisted chemical etching for high-aspect-ratio silicon micro/nanostructures: Mechanisms, parameter mapping, and manufacturing consideration

Author:Yu, Daojiang; Zhang, Chongteng; Shen, Youkang; Li, Liyi

Journal: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 2026; Vol. 210, Issue , pp. -. DOI: 10.1016/j.mssp.2026.110646

6
Combined effects of BET and PF on the mechanism and material removal in alkaline chemical mechanical polishing of In

Author:Zhang, Qingzhu; Sun, Ming; Zheng, Wenwen; Zheng, Jun; Hu, Yuewei

Journal: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 2026; Vol. 210, Issue , pp. -. DOI: 10.1016/j.mssp.2026.110666

7
Analysis of hydrogen-terminated diamond FET with ohmic contacts formed via high-temperature hydrogen plasma treatmen

Author:Liu, Zhangcheng; Tang, Zhengjie; Li, Yang; Chen, Genqiang; Wang, Xiao; Ao, Jinping

Journal: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 2026; Vol. 210, Issue , pp. -. DOI: 10.1016/j.mssp.2026.110676

8
Experimental study on electro-Fenton chemical mechanical polishing of polycrystalline diamon

Author:Chen, Xin; Zhang, Taosheng; Pan, Jisheng; Li, Shijie; Li, Zhaopei; Yang, Zhikang

Journal: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 2026; Vol. 210, Issue , pp. -. DOI: 10.1016/j.mssp.2026.110683

9
Mixed-phase α/γ-FeOOH obtained via F-ion regulation for high-performance supercapacitor anode

Author:Ma, Lin; Chen, Dalei; Kang, Hua; Huang, Changli; Wu, Renbo; Wang, Zetao; Chen, Qiong; Wang, Tingting; Cheng, Liang; Wan, Guixin

Journal: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 2026; Vol. 210, Issue , pp. -. DOI: 10.1016/j.mssp.2026.110671

10
Nitrogen doping enabled oxygen vacancy in In2O3 for high-performance trimethylamine sensin

Author:Cheng, Youde; Che, Qiyang; Zhang, Wen; Jiang, Zhisong; Dai, Xiangsu; Li, Ke

Journal: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 2026; Vol. 210, Issue , pp. -. DOI: 10.1016/j.mssp.2026.110673


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Materials Science In Semiconductor Processing

国际简称:MAT SCI SEMICON PROC参考译名:半导体加工中的材料科学

年发文量:967 CiteScore:8.7 是否预警:否 Gold OA文章占比:10.45% 研究类文章占比:94.73%

杂志社联系方式:ELSEVIER SCI LTD, THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD, ENGLAND, OXON, OX5 1GB

Materials Science In Semiconductor Processing