400-808-1701

Journal Of Semiconductors

Journal Of Semiconductors杂志,由Institute of Physics Publishing出版,12 issues/year,出版语言English,ISSN:1674-4926,E-ISSN:1674-4926。

投稿咨询
Journal Of Semiconductors
Journal Of Semiconductors
Journal Of Semiconductors
SCIE EI

杂志介绍

JCR分区
Q2
中科院分区
2区
影响因子
5.1
CiteScore
7.5
期刊收录
SCIE、EI

Journal Of Semiconductors(中文译名:《半导体学报》),ISSN:1674-4926,EISSN:1674-4926,是Institute of Physics Publishing出版的国际性学术期刊,以12 issues/year形式稳定发行,2026年总发文量约121篇。该刊采用非OA开放访问,学科归属为PHYSICS, CONDENSED MATTER。该刊是物理与天体物理、物理凝聚态物理领域的国际权威刊物,已被SCIE(科学引文索引扩展版)、EI(工程索引)等国际主流学术数据库收录。2026年期刊影响因子达5.1,2025年期刊CiteScore为7.5,2025年期刊自引率约3.9%,在中科院期刊分区体系中位列物理与天体物理大类2区,在所属学科领域具备高学术影响力与国际认可度。Journal Of Semiconductors长期聚焦物理与天体物理、物理凝聚态物理及相关产业的技术应用前沿,在稿件录用评判中,该刊将创新性与前沿性作为核心遴选标准,重点收录能够对物理与天体物理、物理凝聚态物理领域的落地与发展产生实质性推动价值的研究成果。

期刊评价

名词解释:

影响因子(Impact Factor, IF):指该期刊前两年发表的文章,在第三年的平均被引用次数。它反映了期刊的近期平均影响力和热度。

中科院分区:中科院分区表是国内主流的学术期刊分级评价工具,核心意义是建立跨学科可比的统一评价标尺,为职称评审、学位授予、科研立项等科研管理工作提供标准化量化依据,同时帮助科研人员筛选优质期刊、规避学术风险,适配国内本土化的科研评价需求。

期刊分区表

《新锐期刊分区表》(2026年3月发布)

大类学科 小类学科 Top期刊 综述期刊
物理与天体物理
2区
PHYSICS, CONDENSED MATTER 物理:凝聚态物理
2区
否 否

期刊分区表(2025年3月升级版)

大类学科 小类学科 Top期刊 综述期刊
物理与天体物理
3区
PHYSICS, CONDENSED MATTER 物理:凝聚态物理
3区
否 否

期刊分区表(2023年12月升级版)

大类学科 小类学科 Top期刊 综述期刊
物理与天体物理
4区
PHYSICS, CONDENSED MATTER 物理:凝聚态物理
4区
否 否

JCR分区

2025-2026年最新版

按JCI指标学科分区 收录子集 分区 排名 百分位
学科:PHYSICS, CONDENSED MATTER ESCI Q2 26 / 81

68.5

学科:PHYSICS, CONDENSED MATTER ESCI Q2 36 / 81

56.17

2023-2024年最新版

按JCI指标学科分区 收录子集 分区 排名 百分位
学科:PHYSICS, CONDENSED MATTER ESCI Q2 22 / 79

72.8

学科:PHYSICS, CONDENSED MATTER ESCI Q2 37 / 79

53.8


中国学者近期发文

1
MoS2 quantum dots/AlGaN nanowire heterostructure-based photodetectors for solar-blind photodetection and optical communicatio

Author:Wang, Menglong; Chen, Wei; Liu, Xin; Gu, Wengang; Li, Yang; Yang, Xudong; Sun, Haiding

Journal: JOURNAL OF SEMICONDUCTORS. 2026; Vol. 47, Issue 3, pp. -. DOI: 10.1088/1674-4926/25090026

2
Demonstration of InSnO thin-film transistors with superior uniformity and reliability utilizing SiO2 passivatio

Author:Huang, Tingrui; Cao, Jie; Yu, Zuoxu; Zhang, Yuzhen; Xu, Wenting; Li, Xifeng; Peng, Cong; Sun, Weifeng; Yang, Guangan; Wu, Wangran

Journal: JOURNAL OF SEMICONDUCTORS. 2026; Vol. 47, Issue 2, pp. -. DOI: 10.1088/1674-4926/25050023

3
Characteristics of gallium oxide nMOSFET inverte

Author:Zhang, Yixin; Chen, Haifeng; Ding, Zijie; Zhang, Yuduo; Lu, Qin; Liu, Xiangtai; Guan, Yunhe

Journal: JOURNAL OF SEMICONDUCTORS. 2026; Vol. 47, Issue 2, pp. -. DOI: 10.1088/1674-4926/25040011

4
Impact of fluorine plasma and electrothermal annealing on the interfacial properties at Ni/β-Ga2O3 Schottky contact

Author:Zhu, Jianggen; Feng, Jiaren; Huang, Shuting; Yang, Ning; Qiu, Binju; Duan, Enchuan; Liu, Sheng; Zhang, Bo; Zhang, Zhaofu; Zhou, Qi

Journal: JOURNAL OF SEMICONDUCTORS. 2026; Vol. 47, Issue 2, pp. -. DOI: 10.1088/1674-4926/25050020

5
Compressive stress management for hillock-free AlGaN epitaxy on HTA-AlN templates using low-Al-content interlaye

Author:Zhang, Entao; Ben, Jianwei; Nie, Zikai; Zhang, Shanli; Chen, Yang; Jiang, Ke; Sun, Xiaojuan; Li, Dabing

Journal: JOURNAL OF SEMICONDUCTORS. 2026; Vol. 47, Issue 2, pp. -. DOI: 10.1088/1674-4926/25080020

6
Non-D18-based organic solar cells: strategies and insights toward the efficiency ≥ 20

Author:Yang, Fang; Feng, Erming; Zhang, Chujun; Chang, Jianhui; Li, Hengyue; Liu, Fangyang; Zou, Yingping; Yang, Junliang

Journal: JOURNAL OF SEMICONDUCTORS. 2026; Vol. 47, Issue 2, pp. -. DOI: 10.1088/1674-4926/25080035

7
In situ synthesis and stabilization of perovskite quantum dots in electrospinned fiber

Author:Serdobintsev, Alexey; Neplokh, Vladimir; Koryakin, Alexander; Kozhevnikov, Ilia; Yakubova, Anastasiya; Kirilenko, Demid; Saveleva, Mariia; Makarov, Sergey; Mukhin, Ivan; Demina, Polina

Journal: JOURNAL OF SEMICONDUCTORS. 2026; Vol. 47, Issue 2, pp. -. DOI: 10.1088/1674-4926/25060014

8
Identification of H2 and NH3 gases using calorimetric signals and transient response through machine learnin

Author:Luo, Wenxin; Zheng, Yingcong; Liu, Yijun; Li, Mingjie

Journal: JOURNAL OF SEMICONDUCTORS. 2026; Vol. 47, Issue 2, pp. -. DOI: 10.1088/1674-4926/25040018

9
High-speed wavelength division multiplexing silicon photonics receiver chip based on silicon arrayed waveguide gratin

Author:Liu, Zhipeng; Hu, Yiling; Liu, Zhi; Zhang, Jiashun; Zheng, Jun; Yin, Xiaojie; Zuo, Yuhua; An, Junming; Cheng, Buwen

Journal: JOURNAL OF SEMICONDUCTORS. 2026; Vol. 47, Issue 2, pp. -. DOI: 10.1088/1674-4926/25050018

10
Harnessing Eu/Ce-codoped ZnO nanomaterial derived from MOF precursor for high-performance n-butanol sensing under UV activation at ambient temperatur

Author:Liu, Yinzhong; Yang, Xuechun; Guo, Yun; Wang, Lingchao; Li, Xiaofan; Guo, Hui; Qiao, Yiyu; Zhu, Xiaotao; Cheng, Lingli; Jiao, Zheng

Journal: JOURNAL OF SEMICONDUCTORS. 2026; Vol. 47, Issue 2, pp. -. DOI: 10.1088/1674-4926/25070023


在线咨询

Journal Of Semiconductors

国际简称:J SEMICOND参考译名:半导体学报

年发文量:121 CiteScore:7.5 是否预警:否 Gold OA文章占比:0.28% 研究类文章占比:79.34%
Journal Of Semiconductors