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Applied Physics Express

Applied Physics Express杂志,由Japan Society of Applied Physics出版,于2008年创刊,Monthly,出版语言English,ISSN:1882-0778,E-ISSN:1882-0786。

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Applied Physics Express
Applied Physics Express
Applied Physics Express
SCI SCIE EI

杂志介绍

JCR分区
Q3
中科院分区
3区
影响因子
2.5
CiteScore
5.2
期刊收录
SCI、SCIE、EI

Applied Physics Express(中文译名:《应用物理快报》),ISSN:1882-0778,EISSN:1882-0786,是Japan Society of Applied Physics出版的国际性学术期刊,创刊于2008年,以Monthly形式稳定发行,2026年总发文量约140篇。该刊采用非OA开放访问,学科归属为物理 - 物理:应用。该刊是物理与天体物理、物理应用领域的国际权威刊物,已被SCI(科学引文索引)、SCIE(科学引文索引扩展版)、EI(工程索引)等国际主流学术数据库收录。2026年期刊影响因子达2.5,2025年期刊CiteScore为5.2,2025年期刊自引率约4%,在中科院期刊分区体系中位列物理与天体物理大类3区,在所属学科领域具备高学术影响力与国际认可度。Applied Physics Express长期聚焦物理与天体物理、物理应用及相关产业的技术应用前沿,平均审稿周期约1.0个月,审稿流程高效稳定。在稿件录用评判中,该刊将创新性与前沿性作为核心遴选标准,重点收录能够对物理与天体物理、物理应用领域的落地与发展产生实质性推动价值的研究成果。

从全球发文格局来看,JapanCHINA MAINLAND、USA、South Korea、France、GERMANY (FED REP GER)、Taiwan等为核心发文国家与地区;CHINESE ACADEMY OF SCIENCESUNIVERSITY OF TOKYO、OSAKA UNIVERSITY、NAGOYA UNIVERSITY、NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE & TECHNOLOGY (AIST)、TOHOKU UNIVERSITY、KYOTO UNIVERSITY等高校与科研机构是期刊的主要发文单位。

期刊评价

名词解释:

影响因子(Impact Factor, IF):指该期刊前两年发表的文章,在第三年的平均被引用次数。它反映了期刊的近期平均影响力和热度。

中科院分区:中科院分区表是国内主流的学术期刊分级评价工具,核心意义是建立跨学科可比的统一评价标尺,为职称评审、学位授予、科研立项等科研管理工作提供标准化量化依据,同时帮助科研人员筛选优质期刊、规避学术风险,适配国内本土化的科研评价需求。

期刊分区表

《新锐期刊分区表》(2026年3月发布)

大类学科 小类学科 Top期刊 综述期刊
物理与天体物理
3区
PHYSICS, APPLIED 物理:应用
3区

期刊分区表(2025年3月升级版)

大类学科 小类学科 Top期刊 综述期刊
物理与天体物理
3区
PHYSICS, APPLIED 物理:应用
3区

期刊分区表(2023年12月升级版)

大类学科 小类学科 Top期刊 综述期刊
物理与天体物理
4区
PHYSICS, APPLIED 物理:应用
4区

JCR分区

2025-2026年最新版

按JCI指标学科分区 收录子集 分区 排名 百分位
学科:PHYSICS, APPLIED SCIE Q3 114 / 191

40.6

学科:PHYSICS, APPLIED SCIE Q3 104 / 191

45.81

2024-2025年最新版

按JCI指标学科分区 收录子集 分区 排名 百分位
学科:PHYSICS, APPLIED SCIE Q3 117 / 187

37.7

学科:PHYSICS, APPLIED SCIE Q3 108 / 187

42.51


中国学者近期发文

1
Design principles for optimizing pyroelectric responses of doped HfO

Author:Liu, Jian

Journal: APPLIED PHYSICS EXPRESS. 2026; Vol. 19, Issue 2, pp. -. DOI: 10.35848/1882-0786/ae420d

2
Anisotropic domain wall dynamics in perpendicularly magnetized Pt/Co/Ta multilayers with a lateral symmetry breakin

Author:Wang, Yining; Guo, Xi; Zhang, Qi; Xu, Haiming; Zhao, Pengxiang; Fan, Xinyi; Zuo, Yalu; Liu, Xiaoxi; Xi, Li; Cui, Baoshan

Journal: APPLIED PHYSICS EXPRESS. 2026; Vol. 19, Issue 2, pp. -. DOI: 10.35848/1882-0786/ae3938

3
A critical review of Mg3Sb2-based thermoelectric material

Author:Li, Hezhang; Li, Jingwei; Newton, Md All Amin; Yu, Jincheng; Chen, Chen; He, Zizhuang; Chen, Lu; Wang, Zhengqin; Huang, Zhicheng; Hayashi, Kei; Miyazaki, Yuzuru; Wang, Chao; Li, Jing-Feng

Journal: APPLIED PHYSICS EXPRESS. 2026; Vol. 19, Issue 2, pp. -. DOI: 10.35848/1882-0786/ae3ec8

4
Amplification of gain-switched pulses in semiconductor optical amplifie

Author:Kobayashi, Masataka; Tamaki, Ryo; Nakamae, Hidekazu; Kim, Changsu; Ito, Takashi; Chen, Shaoqiang; Kobayashi, Yohei; Takeda, Jun; Katayama, Ikufumi; Akiyama, Hidefumi

Journal: APPLIED PHYSICS EXPRESS. 2026; Vol. 19, Issue 2, pp. -. DOI: 10.35848/1882-0786/ae416a

5
Theoretical advances in resonance Raman spectroscopy of solid

Author:Saito, Riichiro; Hung, Nguyen Tuan; Huang, Jianqi; Liu, Renhui; Yang, Teng

Journal: APPLIED PHYSICS EXPRESS. 2026; Vol. 19, Issue 1, pp. -. DOI: 10.35848/1882-0786/ae37c5

6
Frequency trimming of superconducting qubits using RF-biased ICP annealin

Author:Jia, Zhi-Long; Du, Lei; Tao, Hao-Ran; Chen, Yong; Yang, Hui; Zhang, Chi; Xu, Guo-Liang; Shen, Long; Xu, Wang-Sheng; Wang, Nian-Ci; Duan, Peng; Guo, Guo-Ping

Journal: APPLIED PHYSICS EXPRESS. 2025; Vol. 18, Issue 6, pp. -. DOI: 10.35848/1882-0786/addd5b

7
An efficient long-wavelength single-frequency DBR Tm3+-doped fiber laser at 2.1 μm based on 1610 nm in-band pumpin

Author:Wu, Kaixuan; Yang, Changsheng; Tang, Guowu; Wang, Weichao; Huang, Hengxiao; Zhang, Xin; Zeng, Chun; Huang, Pengxing; Zhao, Qilai; Xu, Shanhui; Yang, Zhongmin

Journal: APPLIED PHYSICS EXPRESS. 2025; Vol. 18, Issue 5, pp. -. DOI: 10.35848/1882-0786/adcdbc

8
Boost in internal quantum efficiency of AlGaN-based deep ultraviolet multiple quantum wells by using multifaceted localization structure

Author:Gao, Ge; Chen, Li; Yao, Yirong; Li, Ming; Yang, Weiguang; Guo, Wei; Ye, Jichun

Journal: APPLIED PHYSICS EXPRESS. 2025; Vol. 18, Issue 5, pp. -. DOI: 10.35848/1882-0786/adcd1f

9
Improved blocking capability of N-ion-implanted β-Ga2O3 U-shaped trench gate MOSFET by annealing in oxyge

Author:Liu, Qi; Zhou, Jingbo; Zhou, Xuanze; Wong, Man Hoi; Yao, Huidong; Liu, Jinyang; Zhang, Xiaodong; Xu, Guangwei; Long, Shibing

Journal: APPLIED PHYSICS EXPRESS. 2025; Vol. 18, Issue 4, pp. -. DOI: 10.35848/1882-0786/adcafe

10
Nonlinear Hall resistance and temperature-dependent behavior in Pt/RuO2 bilayer structures for high-precision temperature sensing application

Author:Chen, Jie; Kang, Sixin; Zhan, Gaocheng; Gu, Shuhao; Jiang, Jingzhe; Wang, Wentao; Hu, Gongwei; Liu, Yiman; Liu, Min; Pan, Liqing

Journal: APPLIED PHYSICS EXPRESS. 2025; Vol. 18, Issue 4, pp. -. DOI: 10.35848/1882-0786/adc5d9


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Applied Physics Express

国际简称:APPL PHYS EXPRESS参考译名:应用物理快报

年发文量:140 CiteScore:5.2 是否预警:否 Gold OA文章占比:85.22% 研究类文章占比:95.71%

杂志社联系方式:JAPAN SOC APPLIED PHYSICS, KUDAN-KITA BUILDING 5TH FLOOR, 1-12-3 KUDAN-KITA, CHIYODA-KU, TOKYO, JAPAN, 102-0073

Applied Physics Express