Ieee Transactions On Electron Devices

Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type p-GaN Gate HEMTs

Ambient Temperature-Induced Device Self-Heating Effects on Multi-Fin Si n-FinFET Performance

Two-Wave Ka-Band Nanosecond Relativistic Cherenkov Oscillator

ASM GaN: Industry Standard Model for GaN RF and Power Devices-Part 1: DC, CV, and RF Model

Numerical Investigation on the Enhanced Performance of N-Polar AlGaN-Based Ultraviolet Light-Emitting Diodes With Superlattice p-Type Doping

A High-Performance Inverted-C Tunnel Junction FET With Source-Channel Overlap Pockets

Assessing MPPT Techniques on Hot-Spotted and Partially Shaded Photovoltaic Modules: Comprehensive Review Based on Experimental Data

Engineering Negative Differential Resistance in NCFETs for Analog Applications

Analytical Model for the Threshold Voltage of p-(Al) GaN High-Electron-Mobility Transistors

True Random Number Generation Using Read Noise of Flash Memory Cells