首页 国际期刊 工程技术期刊 期刊详情(非官网)
400-808-1701

Ieee Transactions On Electron Devices

Ieee Transactions On Electron Devices杂志,由Institute of Electrical and Electronics Engineers Inc.出版,于1954年创刊,Monthly,出版语言English,ISSN:0018-9383,E-ISSN:1557-9646。

投稿咨询
Ieee Transactions On Electron Devices
Ieee Transactions On Electron Devices
Ieee Transactions On Electron Devices
SCI SCIE EI

杂志介绍

JCR分区
Q2
中科院分区
3区
影响因子
3.6
CiteScore
6.5
期刊收录
SCI、SCIE、EI

Ieee Transactions On Electron Devices(中文译名:《IEEE Transactions On Electron Devices》),ISSN:0018-9383,EISSN:1557-9646,是Institute of Electrical and Electronics Engineers Inc.出版的国际性学术期刊,创刊于1954年,以Monthly形式稳定发行,2026年总发文量约1015篇。该刊采用非OA开放访问,学科归属为工程技术 - 工程:电子与电气。该刊是工程技术、工程电子与电气领域的国际权威刊物,已被SCI(科学引文索引)、SCIE(科学引文索引扩展版)、EI(工程索引)等国际主流学术数据库收录。2026年期刊影响因子达3.6,2025年期刊CiteScore为6.5,2025年期刊自引率约13.9%,在中科院期刊分区体系中位列工程技术大类3区,在所属学科领域具备高学术影响力与国际认可度。Ieee Transactions On Electron Devices长期聚焦工程技术、工程电子与电气及相关产业的技术应用前沿,平均审稿周期约4.7个月,审稿流程高效稳定。在稿件录用评判中,该刊将创新性与前沿性作为核心遴选标准,重点收录能够对工程技术、工程电子与电气领域的落地与发展产生实质性推动价值的研究成果。

从全球发文格局来看,CHINA MAINLANDUSA、India、Taiwan、South Korea、GERMANY (FED REP GER)、Japan等为核心发文国家与地区;

期刊评价

名词解释:

影响因子(Impact Factor, IF):指该期刊前两年发表的文章,在第三年的平均被引用次数。它反映了期刊的近期平均影响力和热度。

中科院分区:中科院分区表是国内主流的学术期刊分级评价工具,核心意义是建立跨学科可比的统一评价标尺,为职称评审、学位授予、科研立项等科研管理工作提供标准化量化依据,同时帮助科研人员筛选优质期刊、规避学术风险,适配国内本土化的科研评价需求。

期刊分区表

《新锐期刊分区表》(2026年3月发布)

大类学科 小类学科 Top期刊 综述期刊
工程技术
3区
ENGINEERING, ELECTRICAL & ELECTRONIC 工程:电子与电气 PHYSICS, APPLIED 物理:应用
3区 3区

期刊分区表(2025年3月升级版)

大类学科 小类学科 Top期刊 综述期刊
工程技术
3区
ENGINEERING, ELECTRICAL & ELECTRONIC 工程:电子与电气 PHYSICS, APPLIED 物理:应用
3区 3区

期刊分区表(2023年12月升级版)

大类学科 小类学科 Top期刊 综述期刊
工程技术
2区
PHYSICS, APPLIED 物理:应用 ENGINEERING, ELECTRICAL & ELECTRONIC 工程:电子与电气
2区 3区

JCR分区

2025-2026年最新版

按JCI指标学科分区 收录子集 分区 排名 百分位
学科:ENGINEERING, ELECTRICAL & ELECTRONIC SCIE Q2 142 / 369

61.7

学科:PHYSICS, APPLIED SCIE Q2 72 / 191

62.6

学科:ENGINEERING, ELECTRICAL & ELECTRONIC SCIE Q2 150 / 371

59.7

学科:PHYSICS, APPLIED SCIE Q2 64 / 191

66.75

2024-2025年最新版

按JCI指标学科分区 收录子集 分区 排名 百分位
学科:ENGINEERING, ELECTRICAL & ELECTRONIC SCIE Q2 143 / 368

61.3

学科:PHYSICS, APPLIED SCIE Q2 71 / 187

62.3

学科:ENGINEERING, ELECTRICAL & ELECTRONIC SCIE Q2 149 / 368

59.65

学科:PHYSICS, APPLIED SCIE Q2 65 / 187

65.51


中国学者近期发文

1
A Lightweight Design of True Random Number Generator Based on Superparamagnetic Tunnel Junctio

Author:Wang, You; Zhang, Chaoyue; Xu, Yefan; Gong, Yu; Peng, Shouzhong; Zhang, Yue; Cui, Yijun; Liu, Weiqiang

Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES. 2026; Vol. 73, Issue 5, pp. 3058-3066. DOI: 10.1109/TED.2026.3675612

2
Mechanistic Study of FS Layer in IGBT: Exploring the Effects of Hydrogen and Phosphorus Implantation on Performanc

Author:Sun, Yameng; Chen, Anning; Liu, Xun; Song, Yifan; Zhou, Yang; Ma, Kun; Liu, Sheng

Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES. 2026; Vol. 73, Issue 5, pp. 2663-2672. DOI: 10.1109/TED.2026.3674820

3
Evaluation and Analysis of the RF Stress on the Current Collapse Effect in Si-Based RF GaN HEMT

Author:Sun, Shaoyu; Yin, Zhizhen; Song, Shengxing; Ru, Zhanqiang; Song, Helun

Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES. 2026; Vol. 73, Issue 5, pp. 2557-2565. DOI: 10.1109/TED.2026.3675630

4
Demonstration of 8-kV SiC Gate Turn-Off Thyristors With High di/dt for Nanosecond Pulse Fast-Switching Application

Author:Li, Lingfeng; Li, Juntao; Li, Lianghui; Liao, Zhengxiang; Xu, Xingliang; Zhang, Lin; Meng, Yinghao; He, Yingjiang; Li, Zhiqiang

Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES. 2026; Vol. 73, Issue 5, pp. 2673-2679. DOI: 10.1109/TED.2026.3674876

5
Analytical Model of Charge Transfer in Vertical Pinned Photodiode With Planar Transfer Gate for CMOS Image Sensor

Author:Li, Jingmin; Chen, Quanmin; Xu, Jiangtao

Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES. 2026; Vol. 73, Issue 5, pp. 2600-2608. DOI: 10.1109/TED.2026.3674890

6
A Vertical Top-Gate Multichannel Vacuum Triode With Low Subthreshold Swin

Author:Tang, Wenhua; Li, Zhihao; Chen, Kerun; Xia, Zhangcong; Li, Jie; Shen, Zhihua; Liu, Yiwei; Wang, Xiao; Niu, Gang; Wu, Shengli

Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES. 2026; Vol. 73, Issue 5, pp. 3023-3028. DOI: 10.1109/TED.2026.3674880

7
Dual-Gate Architecture-Boosted 800-ppi IGZO ISTFT Array With Super-Nernstian Sensitivity for On-Chip Ion Imaging and Parallel DNA Detectio

Author:Mei, Zikang; Tang, Wei; Li, Jun; Zhou, Kaiyutai; Chen, Ziwen; Peng, Xiao; Jiang, Wei; Guo, Xiaojun

Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES. 2026; Vol. 73, Issue 5, pp. 3149-3156. DOI: 10.1109/TED.2026.3676451

8
Low-Voltage Solution-Processed Li-Doped CuI Thin-Film Transistors for Neuromorphic Computin

Author:Liu, Junting; Dou, Wei; Liu, Sunwen; Xiang, Rui; Xu, Xiaodong; Chen, Pengfei; Peng, Yuling; Tang, Dongsheng

Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES. 2026; Vol. 73, Issue 5, pp. 2846-2851. DOI: 10.1109/TED.2026.3676042

9
A High-Speed and Low-Power 1.2-kV SiC ASG-MOSFET With Enhanced Short-Circuit Robustnes

Author:Zhang, Yibo; Tang, Xiaoyan; Yuan, Hao; Guo, Jingkai; Wang, Chenyu; Zhang, Zhiwen; Yang, Haohang; Liu, Keyu; Zhou, Yu; Du, Fengyu; Li, Zhaojun; Zhang, Yuming; Song, Qingwen

Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES. 2026; Vol. 73, Issue 5, pp. 2546-2550. DOI: 10.1109/TED.2026.3674078

10
AI-Assisted Design of FISO CFP-DEMOS Devices via Transfer Learning and Multiobjective Optimizatio

Author:Huang, Xiaoyun; Song, Yixian; Tang, Hongyu; Pan, Yan; Ye, Yiting; Meng, Boying; Wang, Shuang; Wang, Zenan; Gao, Dawei; Xu, Kai

Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES. 2026; Vol. 73, Issue 5, pp. 2680-2688. DOI: 10.1109/TED.2026.3674877


在线咨询

Ieee Transactions On Electron Devices

国际简称:IEEE T ELECTRON DEV参考译名:IEEE Transactions On Electron Devices

年发文量:1015 CiteScore:6.5 是否预警:否 Gold OA文章占比:3.41% 研究类文章占比:99.61%

杂志社联系方式:IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 445 HOES LANE, PISCATAWAY, USA, NJ, 08855-4141

Ieee Transactions On Electron Devices