发文地区与机构
近年国家 / 地区发文量统计
| 国家 / 地区 | 发文量 |
|---|---|
| South Korea | 131 |
| CHINA MAINLAND | 104 |
| France | 76 |
| USA | 53 |
| GERMANY (FED REP GER) | 36 |
| India | 24 |
| Spain | 21 |
| England | 17 |
| Belgium | 16 |
| Japan | 16 |
近年机构发文量统计
| 机构 | 发文量 |
|---|---|
| CENTRE NATIONAL DE LA RECHERCHE SCIENTI... | 55 |
| COMMUNAUTE UNIVERSITE GRENOBLE ALPES | 38 |
| UNIVERSITE DE SAVOIE | 33 |
| CEA | 32 |
| SEOUL NATIONAL UNIVERSITY (SNU) | 26 |
| CHINESE ACADEMY OF SCIENCES | 23 |
| KYUNGPOOK NATIONAL UNIVERSITY | 17 |
| STMICROELECTRONICS | 16 |
| POHANG UNIVERSITY OF SCIENCE & TECHNOLO... | 12 |
| INDIAN INSTITUTE OF TECHNOLOGY SYSTEM (... | 11 |
文章引用情况
1
The prospects of transition metal dichalcogenides for ultimately scaled CMOS2
Detailed characterisation of Si Gate-All-Around Nanowire MOSFETs at cryogenic temperatures3
Ferroelectric field-effect transistors based on solution-processed electrochemically exfoliated graphene4
Gradual switching and self-rectifying characteristics of Cu/alpha-IGZO/p(+)-Si RRAM for synaptic device application5
An innovative large scale integration of silicon nanowire-based field effect transistors6
Ultra-low rate dry etching conditions for fabricating normally-off field effect transistors on AlGaN/GaN heterostructures7
Al2O3 thin film multilayer structure for application in RRAM devices8
Role of AlGaN/GaN interface traps on negative threshold voltage shift in AlGaN/GaN HEMT9
Ohmic contact to AlGaN/GaN HEMT with electrodes in contact with heterostructure interface10
A compact model and TCAD simulation for GaN-gate injection transistor (GIT)