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Solid-state Electronics

Solid-state Electronics杂志,由Elsevier Ltd出版,于1960年创刊,Monthly,出版语言English,ISSN:0038-1101,E-ISSN:1879-2405。

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Solid-state Electronics
Solid-state Electronics
Solid-state Electronics
SCI SCIE EI

杂志介绍

JCR分区
Q4
中科院分区
4区
影响因子
1.4
CiteScore
3.1
期刊收录
SCI、SCIE、EI

Solid-state Electronics(中文译名:《固态电子》),ISSN:0038-1101,EISSN:1879-2405,是Elsevier Ltd出版的国际性学术期刊,创刊于1960年,以Monthly形式稳定发行,2026年总发文量约198篇。该刊采用非OA开放访问,学科归属为物理 - 工程:电子与电气。该刊是物理与天体物理、工程电子与电气领域的国际权威刊物,已被SCI(科学引文索引)、SCIE(科学引文索引扩展版)、EI(工程索引)等国际主流学术数据库收录。2026年期刊影响因子达1.4,2025年期刊CiteScore为3.1,2025年期刊自引率约14.3%,在中科院期刊分区体系中位列物理与天体物理大类4区,在所属学科领域具备高学术影响力与国际认可度。Solid-state Electronics长期聚焦物理与天体物理、工程电子与电气及相关产业的技术应用前沿,平均审稿周期一般,3-6周,审稿流程高效稳定。在稿件录用评判中,该刊将创新性与前沿性作为核心遴选标准,重点收录能够对物理与天体物理、工程电子与电气领域的落地与发展产生实质性推动价值的研究成果。

从全球发文格局来看,South KoreaCHINA MAINLAND、France、USA、GERMANY (FED REP GER)、India、Spain等为核心发文国家与地区;CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS)COMMUNAUTE UNIVERSITE GRENOBLE ALPES、UNIVERSITE DE SAVOIE、CEA、SEOUL NATIONAL UNIVERSITY (SNU)、CHINESE ACADEMY OF SCIENCES、KYUNGPOOK NATIONAL UNIVERSITY等高校与科研机构是期刊的主要发文单位。

期刊评价

名词解释:

影响因子(Impact Factor, IF):指该期刊前两年发表的文章,在第三年的平均被引用次数。它反映了期刊的近期平均影响力和热度。

中科院分区:中科院分区表是国内主流的学术期刊分级评价工具,核心意义是建立跨学科可比的统一评价标尺,为职称评审、学位授予、科研立项等科研管理工作提供标准化量化依据,同时帮助科研人员筛选优质期刊、规避学术风险,适配国内本土化的科研评价需求。

期刊分区表

《新锐期刊分区表》(2026年3月发布)

大类学科 小类学科 Top期刊 综述期刊
物理与天体物理
4区
ENGINEERING, ELECTRICAL & ELECTRONIC 工程:电子与电气 PHYSICS, APPLIED 物理:应用 PHYSICS, CONDENSED MATTER 物理:凝聚态物理
4区 4区 4区

期刊分区表(2025年3月升级版)

大类学科 小类学科 Top期刊 综述期刊
物理与天体物理
4区
ENGINEERING, ELECTRICAL & ELECTRONIC 工程:电子与电气 PHYSICS, APPLIED 物理:应用 PHYSICS, CONDENSED MATTER 物理:凝聚态物理
4区 4区 4区

期刊分区表(2023年12月升级版)

大类学科 小类学科 Top期刊 综述期刊
物理与天体物理
4区
ENGINEERING, ELECTRICAL & ELECTRONIC 工程:电子与电气 PHYSICS, APPLIED 物理:应用 PHYSICS, CONDENSED MATTER 物理:凝聚态物理
4区 4区 4区

JCR分区

2025-2026年最新版

按JCI指标学科分区 收录子集 分区 排名 百分位
学科:ENGINEERING, ELECTRICAL & ELECTRONIC SCIE Q4 294 / 369

20.5

学科:PHYSICS, APPLIED SCIE Q4 155 / 191

19.1

学科:PHYSICS, CONDENSED MATTER SCIE Q4 64 / 81

21.6

学科:ENGINEERING, ELECTRICAL & ELECTRONIC SCIE Q4 299 / 371

19.54

学科:PHYSICS, APPLIED SCIE Q4 154 / 191

19.63

学科:PHYSICS, CONDENSED MATTER SCIE Q3 60 / 81

26.54

2024-2025年最新版

按JCI指标学科分区 收录子集 分区 排名 百分位
学科:ENGINEERING, ELECTRICAL & ELECTRONIC SCIE Q4 277 / 368

24.9

学科:PHYSICS, APPLIED SCIE Q4 146 / 187

22.2

学科:PHYSICS, CONDENSED MATTER SCIE Q4 63 / 80

21.9

学科:ENGINEERING, ELECTRICAL & ELECTRONIC SCIE Q4 285 / 368

22.69

学科:PHYSICS, APPLIED SCIE Q4 149 / 187

20.59

学科:PHYSICS, CONDENSED MATTER SCIE Q3 58 / 80

28.13


中国学者近期发文

1
A method for series resistance extraction in advanced MOSFET

Author:Yan, Yu; Dou, Cunhua; Zhang, Xuan; Song, Weijia; Tang, Zhiyu; Li, Binhong; Wan, Jing; Sun, Huabin; Zhao, Xing; Wang, Yun; Xu, Yong; Cristoloveanu, Sorin

Journal: SOLID-STATE ELECTRONICS. 2026; Vol. 235, Issue , pp. -. DOI: 10.1016/j.sse.2026.109360

2
Investigation on pulse repetition frequency characteristics of 4H-Silicon carbide drift step recovery diod

Author:Liu, Tong; Liang, Lin; Wen, Kaijun

Journal: SOLID-STATE ELECTRONICS. 2026; Vol. 234, Issue , pp. -. DOI: 10.1016/j.sse.2026.109354

3
Investigation of cap layer effects on low-contact-resistance vanadium-based Au-free low-temperature ohmic contacts for AlGaN/GaN HEM

Author:Xie, Zijing; Ma, Xiao; Li, Xinghuan; Tang, Jun; Wang, Hong

Journal: SOLID-STATE ELECTRONICS. 2026; Vol. 234, Issue , pp. -. DOI: 10.1016/j.sse.2026.109351

4
Bonding of micro LEDs using wet reflow process of indium bumps based on SU-8 solder mas

Author:Bai, Shuangjia; Lang, Taifu; Lin, Xin; Wang, Shuaishuai; Wang, Zhihua; Lin, Chang; Yan, Qun; Sun, Jie

Journal: SOLID-STATE ELECTRONICS. 2026; Vol. 234, Issue , pp. -. DOI: 10.1016/j.sse.2026.109333

5
Investigation of performance enhancement in high-efficiency organic light-emitting device based on a bipolar hos

Author:Wu, Lishuang; Xu, Huiwen; Zhang, Jinghong; Wang, Chandong; Wu, Zhijun; Yang, Huishan

Journal: SOLID-STATE ELECTRONICS. 2025; Vol. 229, Issue , pp. -. DOI: 10.1016/j.sse.2025.109160

6
Influence of N-type substrate's bias potential on electrical characteristics of 4H-SiC integrated devices for All-SiC IC

Author:Li, Yongjia; Zheng, Guiqiang; Ma, Jie; Gu, Yong; Wei, Jiaxing; Li, Sheng; Zhang, Long; Liu, Siyang; Sun, Weifeng

Journal: SOLID-STATE ELECTRONICS. 2025; Vol. 229, Issue , pp. -. DOI: 10.1016/j.sse.2025.109155

7
Characteristics evaluation of reverse blocking diode thyristor for DC circuit breake

Author:Qing, Zhengheng; Liang, Lin; Xu, Mosai

Journal: SOLID-STATE ELECTRONICS. 2025; Vol. 229, Issue , pp. -. DOI: 10.1016/j.sse.2025.109163

8
Model of threshold voltage and drain current in core-shell junctionless transistor on FD-SO

Author:Dou, Cunhua; Song, Weijia; Yan, Yu; Zhang, Xuan; Tang, Zhiyu; Li, Binhong; Xu, Yong; Cristoloveanu, Sorin

Journal: SOLID-STATE ELECTRONICS. 2025; Vol. 229, Issue , pp. -. DOI: 10.1016/j.sse.2025.109173

9
Achieving long-term and short-term synaptic plasticity in adaptive ANNs: A memristor circuit design with switchable dual-mod

Author:Jin, Yanliang; Xu, Xiaochuan; Gao, Yuan; Liu, Shengli

Journal: SOLID-STATE ELECTRONICS. 2025; Vol. 228, Issue , pp. -. DOI: 10.1016/j.sse.2025.109129

10
Implementation and investigation of high voltage CMOS device in advanced Sub-90 nm node processe

Author:Huang, Xin; Zhang, Yintong; Xu, Zhaozhao; Fang, Ziquan; Liu, Donghua; Qian, Wensheng

Journal: SOLID-STATE ELECTRONICS. 2025; Vol. 228, Issue , pp. -. DOI: 10.1016/j.sse.2025.109142


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Solid-state Electronics

国际简称:SOLID STATE ELECTRON参考译名:固态电子

年发文量:198 CiteScore:3.1 是否预警:否 Gold OA文章占比:18.85% 研究类文章占比:99.49%

杂志社联系方式:PERGAMON-ELSEVIER SCIENCE LTD, THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD, ENGLAND, OX5 1GB

Solid-state Electronics