发文地区与机构
近年国家 / 地区发文量统计
| 国家 / 地区 | 发文量 |
|---|---|
| CHINA MAINLAND | 577 |
| USA | 282 |
| South Korea | 174 |
| Taiwan | 123 |
| Japan | 65 |
| England | 60 |
| India | 49 |
| Belgium | 37 |
| GERMANY (FED REP GER) | 37 |
| France | 32 |
近年机构发文量统计
| 机构 | 发文量 |
|---|---|
| CHINESE ACADEMY OF SCIENCES | 84 |
| UNIVERSITY OF CALIFORNIA SYSTEM | 70 |
| XIDIAN UNIVERSITY | 56 |
| NATIONAL YANG MING CHIAO TUNG UNIVERSIT... | 49 |
| HONG KONG UNIVERSITY OF SCIENCE & TECHN... | 48 |
| PEKING UNIVERSITY | 42 |
| UNIVERSITY OF ELECTRONIC SCIENCE & TECH... | 42 |
| INDIAN INSTITUTE OF TECHNOLOGY SYSTEM (... | 36 |
| IMEC | 35 |
| NATIONAL SUN YAT SEN UNIVERSITY | 35 |
文章引用情况
1
Fabrication of Pd-Decorated MoSe2 Nanoflowers and Density Functional Theory Simulation Toward Ammonia Sensing2
Compatibility of HfN Metal Gate Electrodes With Hf0.5Zr0.5O2 Ferroelectric Thin Films for Ferroelectric Field-Effect Transistors3
A 1.9-kV/2.6 m Omega.cm(2) Lateral GaN Schottky Barrier Diode on Silicon Substrate With Tungsten Anode and Low Turn-ON Voltage of 0.35 V4
Flexible Pressure Sensor With High Sensitivity and Low Hysteresis Based on a Hierarchically Microstructured Electrode5
3.8W/mm RF Power Density for ALD Al2O3-Based Two-Dimensional Hole Gas Diamond MOSFET Operating at Saturation Velocity6
High Breakdown Voltage in RF AlN/GaN/AlN Quantum Well HEMTs7
Effects of Capping Electrode on Ferroelectric Properties of Hf0.5Zr0.5O2 Thin Films8
A High-Gain Inverter With Low-Temperature Poly-Si Oxide Thin-Film Transistors9
Current Carrying Capacity of Quasi-1D ZrTe3 Van Der Waals Nanoribbons10
820-V GaN-on-Si Quasi-Vertical p-i-n Diodes With BFOM of 2.0 GW/cm(2)