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Ieee Electron Device Letters

Ieee Electron Device Letters杂志,由Institute of Electrical and Electronics Engineers Inc.出版,于1980年创刊,Monthly,出版语言English,ISSN:0741-3106,E-ISSN:1558-0563。

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Ieee Electron Device Letters
Ieee Electron Device Letters
Ieee Electron Device Letters
SCI SCIE EI

杂志介绍

JCR分区
Q2
中科院分区
2区
影响因子
4.6
CiteScore
7.9
期刊收录
SCI、SCIE、EI

Ieee Electron Device Letters(中文译名:《IEEE 电子器件字母》),ISSN:0741-3106,EISSN:1558-0563,是Institute of Electrical and Electronics Engineers Inc.出版的国际性学术期刊,创刊于1980年,以Monthly形式稳定发行,2026年总发文量约550篇。该刊采用非OA开放访问,学科归属为工程技术 - 工程:电子与电气。该刊是工程技术、工程电子与电气领域的国际权威刊物,已被SCI(科学引文索引)、SCIE(科学引文索引扩展版)、EI(工程索引)等国际主流学术数据库收录。2026年期刊影响因子达4.6,2025年期刊CiteScore为7.9,2025年期刊自引率约10.9%,在中科院期刊分区体系中位列工程技术大类2区,在所属学科领域具备高学术影响力与国际认可度。Ieee Electron Device Letters长期聚焦工程技术、工程电子与电气及相关产业的技术应用前沿,平均审稿周期约1.3个月,审稿流程高效稳定。在稿件录用评判中,该刊将创新性与前沿性作为核心遴选标准,重点收录能够对工程技术、工程电子与电气领域的落地与发展产生实质性推动价值的研究成果。

从全球发文格局来看,CHINA MAINLANDUSA、South Korea、Taiwan、Japan、England、India等为核心发文国家与地区;CHINESE ACADEMY OF SCIENCESUNIVERSITY OF CALIFORNIA SYSTEM、XIDIAN UNIVERSITY、NATIONAL YANG MING CHIAO TUNG UNIVERSITY、HONG KONG UNIVERSITY OF SCIENCE & TECHNOLOGY、PEKING UNIVERSITY、UNIVERSITY OF ELECTRONIC SCIENCE & TECHNOLOGY OF CHINA等高校与科研机构是期刊的主要发文单位。

期刊评价

名词解释:

影响因子(Impact Factor, IF):指该期刊前两年发表的文章,在第三年的平均被引用次数。它反映了期刊的近期平均影响力和热度。

中科院分区:中科院分区表是国内主流的学术期刊分级评价工具,核心意义是建立跨学科可比的统一评价标尺,为职称评审、学位授予、科研立项等科研管理工作提供标准化量化依据,同时帮助科研人员筛选优质期刊、规避学术风险,适配国内本土化的科研评价需求。

期刊分区表

《新锐期刊分区表》(2026年3月发布)

大类学科 小类学科 Top期刊 综述期刊
工程技术
2区
ENGINEERING, ELECTRICAL & ELECTRONIC 工程:电子与电气
3区

期刊分区表(2025年3月升级版)

大类学科 小类学科 Top期刊 综述期刊
工程技术
2区
ENGINEERING, ELECTRICAL & ELECTRONIC 工程:电子与电气
3区

期刊分区表(2023年12月升级版)

大类学科 小类学科 Top期刊 综述期刊
工程技术
2区
ENGINEERING, ELECTRICAL & ELECTRONIC 工程:电子与电气
2区

JCR分区

2025-2026年最新版

按JCI指标学科分区 收录子集 分区 排名 百分位
学科:ENGINEERING, ELECTRICAL & ELECTRONIC SCIE Q2 108 / 369

70.9

学科:ENGINEERING, ELECTRICAL & ELECTRONIC SCIE Q2 97 / 371

73.99

2024-2025年最新版

按JCI指标学科分区 收录子集 分区 排名 百分位
学科:ENGINEERING, ELECTRICAL & ELECTRONIC SCIE Q2 99 / 368

73.2

学科:ENGINEERING, ELECTRICAL & ELECTRONIC SCIE Q1 80 / 368

78.4


中国学者近期发文

1
Dual-Gate Phototransistor for Electrically Tunable Image Edge Detectio

Author:Zhu, Kangle; Zheng, Yiqiang; Li, Zhexin; Li, Linlin; Xu, Hao; Zhang, Wenxuan; Wang, Hailong; Xue, Han; Deng, Fei; Lou, Zheng; Wang, Lili

Journal: IEEE ELECTRON DEVICE LETTERS. 2026; Vol. 47, Issue 4, pp. 772-775. DOI: 10.1109/LED.2026.3660304

2
A Bilayer LiF/C60 Interfacial Strategy for High Efficiency Inverted PbS QD Photodetector

Author:Zhong, Andong; Ling, Kaijie; Li, Guopeng; Chen, Qian; Zheng, Yixin; Guo, Tianjing; Xia, Yong; Chen, Wei; Tang, Haodong

Journal: IEEE ELECTRON DEVICE LETTERS. 2026; Vol. 47, Issue 4, pp. 700-703. DOI: 10.1109/LED.2026.3658433

3
Patterned Quantum Dot Light-Emitting Diode Array Based on BNNS-Assisted Heat Releas

Author:Zhang, Zehuang; Pan, Youjiang; Hu, Hailong; Lin, Lihua; Guo, Tailiang; Li, Fushan

Journal: IEEE ELECTRON DEVICE LETTERS. 2026; Vol. 47, Issue 4, pp. 780-783. DOI: 10.1109/LED.2026.3665548

4
High-Performance Low-Voltage-Operation InSnZnO/InAlO Heterojunction Thin-Film Transistors via Atomic Layer Depositio

Author:Zhang, Yu; Liu, Jiong; Wu, Zecheng; Luo, Binbin; Wu, Xuefeng; Bai, Rongxu; Zhang, David W.; Sun, Qingqing; Ji, Li; Hu, Shen

Journal: IEEE ELECTRON DEVICE LETTERS. 2026; Vol. 47, Issue 4, pp. 764-767. DOI: 10.1109/LED.2026.3661288

5
A Sub-20 mV VTH Hysteresis Enhancement-Mode GaN p-FET With PEALD AlON Gate Dielectri

Author:Zhang, Xuanming; Duan, Jiachen; Ding, Yihan; Guo, Qiyi; Wu, Jingyue; Liang, Ye; Zhang, Yuanlei; Gu, Jiangmin; Zhang, Jie; Mitrovic, Ivona; van Zalinge, Harm; Low, Kain Lu; Huang, Sen; Liu, Wen

Journal: IEEE ELECTRON DEVICE LETTERS. 2026; Vol. 47, Issue 4, pp. 712-715. DOI: 10.1109/LED.2026.3663022

6
Anti-Ferroelectric ZrO2 Capacitors With Ultra-High Capacitive Memory Window and Low Operating Voltag

Author:Zhang, Miaomiao; Ma, Minglei; Xu, Jiacheng; Qian, Haoji; Shen, Rongzong; Lin, Gaobo; Gu, Jiani; Song, Xinda; Ding, Yian; Cheng, Ran; Chen, Bing; Liu, Yan; Jin, Chengji; Chen, Jiajia; Han, Genquan

Journal: IEEE ELECTRON DEVICE LETTERS. 2026; Vol. 47, Issue 4, pp. 832-835. DOI: 10.1109/LED.2026.3664075

7
An X-Band High Efficiency and Single Mode Output Overmoded RBWO Packed With Permanent Magne

Author:Zhang, Dian; Jin, Zhenxing; Yang, Kaiqi; Yan, Jiyu; Zhang, Jun; Xiang, Yujie; Cheng, Xinbing; Zhang, Zicheng; Shu, Ting; Chen, Dongqun

Journal: IEEE ELECTRON DEVICE LETTERS. 2026; Vol. 47, Issue 4, pp. 808-811. DOI: 10.1109/LED.2026.3661368

8
Top-ZrO2 Interface-Engineered ZrO2/HZO Ferroelectric Superlattices With Highly Stable Polarization Switching Over 1011 Cycle

Author:Zhang, Chuanli; Yu, Xun; Chen, Zhenkun; Tang, Ruifeng; Fan, Guangxiang; Zhang, Yifan; Jiang, Pengfei; Long, Xiao; Wang, Yuan; Yang, Yang; Gong, Tiancheng; Wang, Yan; Wei, Wei; Luo, Qing

Journal: IEEE ELECTRON DEVICE LETTERS. 2026; Vol. 47, Issue 4, pp. 744-747. DOI: 10.1109/LED.2026.3661469

9
Wafer-Level Heterogeneous Integration of GaN NMOS and CNT PMOS Transistors Using Direct-Immersion Technolog

Author:Zhang, Bowen; Zhu, Jiejie; Lei, Yimin; Wei, Yuxiang; Qin, Lingjie; Zhou, Yuxi; Li, Mengdi; Zhang, Mingchen; Wang, Hong; Hao, Yue; Ma, Xiaohua

Journal: IEEE ELECTRON DEVICE LETTERS. 2026; Vol. 47, Issue 4, pp. 788-791. DOI: 10.1109/LED.2026.3661149

10
New Insights Into Low-Temperature Thermal Stability and PBTI in Back-Gated IGZO/HfO2 Transistors Related to Oxygen Migratio

Author:Xiang, Liang; Yan, Gangping; Yang, Hong; Yang, Shangbo; Xu, Gaobo; Ma, Xueli; Xiang, Jinjuan; Wang, Guilei; Yin, Huaxiang; Wang, Xiaolei; Zhao, Chao; Luo, Jun; Wang, Wenwu

Journal: IEEE ELECTRON DEVICE LETTERS. 2026; Vol. 47, Issue 4, pp. 760-763. DOI: 10.1109/LED.2026.3661984


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Ieee Electron Device Letters

国际简称:IEEE ELECTR DEVICE L参考译名:IEEE 电子器件字母

年发文量:550 CiteScore:7.9 是否预警:否 Gold OA文章占比:2.21% 研究类文章占比:100.00%

杂志社联系方式:IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 445 HOES LANE, PISCATAWAY, USA, NJ, 08855-4141

Ieee Electron Device Letters