文章引用情况
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Multitechnique elemental depth profiling of InAlGaN and InAlN films2
Influence of mask material on the electrical properties of selective area epitaxy GaN microstructures3
Buffer insensitive optoelectronic quality of InP-on-Si with templated liquid phase growth4
Eighteen mega-electron-volt alpha-particle damage in homoepitaxial beta-Ga2O3 Schottky rectifiers5
Nitride etching with hydrofluorocarbons III: Comparison of C4H9F and CH3F for low-k ' nitride spacer etch processes6
Reactivity studies and structural properties of Al on compound semiconductor surfaces7
Combined interpolation, scale change, and noise reduction in spectral analysis8
Tip-based nano-manufacturing and -metrology9
Enhanced uniformity of III-nitride nanowire arrays on bulk metallic glass and nanocrystalline substrates10
Improving the resolution and throughput of achromatic Talbot lithography