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Journal Of Vacuum Science & Technology B

Journal Of Vacuum Science & Technology B杂志,由AVS Science and Technology Society出版,于1991年创刊,Bimonthly,出版语言English,ISSN:1071-1023,E-ISSN:2166-2754。

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Journal Of Vacuum Science & Technology B
Journal Of Vacuum Science & Technology B
Journal Of Vacuum Science & Technology B
SCI SCIE

杂志介绍

JCR分区
Q4
中科院分区
4区
影响因子
1.6
CiteScore
2.5
期刊收录
SCI、SCIE

Journal Of Vacuum Science & Technology B(中文译名:《真空科学与技术学报B》),ISSN:1071-1023,EISSN:2166-2754,是AVS Science and Technology Society出版的国际性学术期刊,创刊于1991年,以Bimonthly形式稳定发行,2026年总发文量约170篇。该刊采用非OA开放访问,学科归属为Materials Science - Materials Chemistry。该刊是工程技术、工程电子与电气领域的国际权威刊物,已被SCI(科学引文索引)、SCIE(科学引文索引扩展版)等国际主流学术数据库收录。2026年期刊影响因子达1.6,2025年期刊CiteScore为2.5,2025年期刊自引率约6.2%,在中科院期刊分区体系中位列工程技术大类4区,在所属学科领域具备高学术影响力与国际认可度。Journal Of Vacuum Science & Technology B长期聚焦工程技术、工程电子与电气及相关产业的技术应用前沿,平均审稿周期约3.0个月,审稿流程高效稳定。在稿件录用评判中,该刊将创新性与前沿性作为核心遴选标准,重点收录能够对工程技术、工程电子与电气领域的落地与发展产生实质性推动价值的研究成果。

期刊评价

名词解释:

影响因子(Impact Factor, IF):指该期刊前两年发表的文章,在第三年的平均被引用次数。它反映了期刊的近期平均影响力和热度。

中科院分区:中科院分区表是国内主流的学术期刊分级评价工具,核心意义是建立跨学科可比的统一评价标尺,为职称评审、学位授予、科研立项等科研管理工作提供标准化量化依据,同时帮助科研人员筛选优质期刊、规避学术风险,适配国内本土化的科研评价需求。

期刊分区表

《新锐期刊分区表》(2026年3月发布)

大类学科 小类学科 Top期刊 综述期刊
工程技术
4区
ENGINEERING, ELECTRICAL & ELECTRONIC 工程:电子与电气 NANOSCIENCE & NANOTECHNOLOGY 纳米科技 PHYSICS, APPLIED 物理:应用
4区 4区 4区

期刊分区表(2025年3月升级版)

大类学科 小类学科 Top期刊 综述期刊
工程技术
4区
ENGINEERING, ELECTRICAL & ELECTRONIC 工程:电子与电气 NANOSCIENCE & NANOTECHNOLOGY 纳米科技 PHYSICS, APPLIED 物理:应用
4区 4区 4区

期刊分区表(2023年12月升级版)

大类学科 小类学科 Top期刊 综述期刊
工程技术
4区
ENGINEERING, ELECTRICAL & ELECTRONIC 工程:电子与电气 NANOSCIENCE & NANOTECHNOLOGY 纳米科技 PHYSICS, APPLIED 物理:应用
4区 4区 4区

JCR分区

2025-2026年最新版

按JCI指标学科分区 收录子集 分区 排名 百分位
学科:ENGINEERING, ELECTRICAL & ELECTRONIC SCIE Q4 280 / 369

24.3

学科:NANOSCIENCE & NANOTECHNOLOGY SCIE Q4 128 / 148

13.9

学科:PHYSICS, APPLIED SCIE Q4 148 / 191

22.8

学科:ENGINEERING, ELECTRICAL & ELECTRONIC SCIE Q4 299 / 371

19.54

学科:NANOSCIENCE & NANOTECHNOLOGY SCIE Q4 125 / 148

15.88

学科:PHYSICS, APPLIED SCIE Q4 154 / 191

19.63

2024-2025年最新版

按JCI指标学科分区 收录子集 分区 排名 百分位
学科:ENGINEERING, ELECTRICAL & ELECTRONIC SCIE Q4 289 / 368

21.6

学科:NANOSCIENCE & NANOTECHNOLOGY SCIE Q4 131 / 147

11.2

学科:PHYSICS, APPLIED SCIE Q4 155 / 187

17.4

学科:ENGINEERING, ELECTRICAL & ELECTRONIC SCIE Q4 293 / 368

20.52

学科:NANOSCIENCE & NANOTECHNOLOGY SCIE Q4 123 / 147

16.67

学科:PHYSICS, APPLIED SCIE Q4 151 / 187

19.52


中国学者近期发文

1
Optimizing photoresist linewidth roughness in ion beam shaping: A systematic study of stage angular configuratio

Author:Wu, Xiaojian; Dong, Shuo; Xu, Kaidong; Zhuang, Shiwei

Journal: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. 2026; Vol. 44, Issue 3, pp. -. DOI: 10.1116/6.0005220

2
Dual-gate Hf-doped InZnO field-effect transistors with sub-0.1 V threshold voltage shift under bias stres

Author:Li, Tiaoyang; Hu, Rongling

Journal: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. 2026; Vol. 44, Issue 3, pp. -. DOI: 10.1116/6.0005363

3
Multiphysics simulation of non-uniform magnetic fields' effect on plasma uniformity in capacitively coupled plasma

Author:Cui, Yu-Meng; Liu, Ze-Xuan; Zhang, Si-Bo; Chen, Long; Zhang, Quan-Zhi

Journal: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. 2026; Vol. 44, Issue 3, pp. -. DOI: 10.1116/6.0005370

4
Parametric study and performance evaluation of the louver structure in the pumping pipeline of electron beam evaporation coating equipmen

Author:Yuan, Zuhao; Li, Yong; She, Pengcheng; Gong, Jun; Shi, Renping; He, Qiufu; Liu, Fangting; Li, Junhui

Journal: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. 2026; Vol. 44, Issue 3, pp. -. DOI: 10.1116/6.0005283

5
Ag-doping induced enhancement in power factor of flexible n-type Bi2Te2.7Se0.3 thin film

Author:Tian, Xujiang; Wu, Chonghao; Ma, Congming; Liang, Shaojun; Zhu, Hanming; Yue, Song

Journal: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. 2026; Vol. 44, Issue 3, pp. -. DOI: 10.1116/6.0005314

6
Study on the imaging of bright-field and dark-field for contact holes in extreme ultraviolet lithography considering stage vibration effect

Author:Shen, Hao; Zhang, Libin; Wang, Jiashuo; Rui, Dinghai; Su, Yajuan; Wei, Yayi

Journal: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. 2026; Vol. 44, Issue 3, pp. -. DOI: 10.1116/6.0005261

7
Optimization of key process parameters for cobalt sputtering in 0.11 μm CMOS device

Author:Wang, Furong; Xu, Shaohui; Song, Zhenhua; Zhang, Yan; Zhou, Yaohui; Li, Mincheng

Journal: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. 2026; Vol. 44, Issue 2, pp. -. DOI: 10.1116/6.0005238

8
Simulation and deposition experimental study of a microwave plasma chemical vapor deposition device with an oblique cone structure desig

Author:Hu, Jibo; Zhu, Xiaoxiang; Zhao, Shusen; Wang, Huibin; Zhao, Yapei

Journal: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. 2026; Vol. 44, Issue 2, pp. -. DOI: 10.1116/6.0004980

9
Analysis of particle defects on cleaned GaSb substrate

Author:Bai, Yihan; Zhao, Youwen; Li, Chenhui; Yang, Wenwen; Lv, Xinyu; Fan, Jiangtao; Shen, Guiying

Journal: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. 2026; Vol. 44, Issue 2, pp. -. DOI: 10.1116/6.0005014

10
Maxwell design of the magnetic field in an unbalanced magnetron system for optimization toward sputtering of Al-Si allo

Author:Su, Zhiwei; Yan, Caibo; Liu, Yaoyao; Zhou, Yanwen

Journal: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. 2026; Vol. 44, Issue 2, pp. -. DOI: 10.1116/6.0005093


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Journal Of Vacuum Science & Technology B

国际简称:J VAC SCI TECHNOL B参考译名:真空科学与技术学报B

年发文量:170 CiteScore:2.5 是否预警:否 Gold OA文章占比:0.00% 研究类文章占比:0.00%

杂志社联系方式:A V S AMER INST PHYSICS, STE 1 NO 1, 2 HUNTINGTON QUADRANGLE, MELVILLE, USA, NY, 11747-4502

Journal Of Vacuum Science & Technology B