发文地区与机构
近年国家 / 地区发文量统计
| 国家 / 地区 | 发文量 |
|---|---|
| CHINA MAINLAND | 168 |
| USA | 99 |
| Taiwan | 98 |
| South Korea | 74 |
| Japan | 61 |
| India | 40 |
| France | 29 |
| GERMANY (FED REP GER) | 27 |
| Switzerland | 23 |
| Belgium | 20 |
近年机构发文量统计
| 机构 | 发文量 |
|---|---|
| NATIONAL YANG MING CHIAO TUNG UNIVERSIT... | 35 |
| INDIAN INSTITUTE OF TECHNOLOGY SYSTEM (... | 22 |
| CHINESE ACADEMY OF SCIENCES | 20 |
| ECOLE POLYTECHNIQUE FEDERALE DE LAUSANN... | 18 |
| NATIONAL TSING HUA UNIVERSITY | 17 |
| UNIVERSITY OF ELECTRONIC SCIENCE & TECH... | 17 |
| NATIONAL CHENG KUNG UNIVERSITY | 15 |
| SEOUL NATIONAL UNIVERSITY (SNU) | 15 |
| SOUTH CHINA UNIVERSITY OF TECHNOLOGY | 15 |
| PEKING UNIVERSITY | 14 |
文章引用情况
1
Normally-OFF GaN MIS-HEMT With F- Doped Gate Insulator Using Standard Ion Implantation2
SCR-Based ESD Protection Using a Penta-Well for 5 V Applications3
Improved Uniformity and Endurance Through Suppression of Filament Overgrowth in Electrochemical Metallization Memory With AgInSbTe Buffer Layer4
A Method to Reduce Forming Voltage Without Degrading Device Performance in Hafnium Oxide-Based 1T1R Resistive Random Access Memory5
Experimental Observation and Simulation Model for Transient Characteristics of Negative-Capacitance in Ferroelectric HfZrO2 Capacitor6
Ferroelectric HfZrOx FETs on SOI Substrate With Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance)7
Systematic DC/AC Performance Benchmarking of Sub-7-nm Node FinFETs and Nanosheet FETs8
A Graphene Oxide Quantum Dots Embedded Charge Trapping Memory With Enhanced Memory Window and Data Retention9
Evaluation of Si:HfO2 Ferroelectric Properties in MFM and MFIS Structures10
Interface Coupled Photodetector (ICPD) With High Photoresponsivity Based on Silicon-on-Insulator Substrate (SOI)