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Ieee Journal Of The Electron Devices Society

Ieee Journal Of The Electron Devices Society杂志,由Institute of Electrical and Electronics Engineers Inc.出版,于2013年创刊,1 issue/year,出版语言English,ISSN:2168-6734,E-ISSN:2168-6734。

投稿咨询
Ieee Journal Of The Electron Devices Society
Ieee Journal Of The Electron Devices Society
Ieee Journal Of The Electron Devices Society
SCI SCIE EI

杂志介绍

JCR分区
Q2
中科院分区
3区
影响因子
2.9
CiteScore
4.8
期刊收录
SCI、SCIE、EI

Ieee Journal Of The Electron Devices Society(中文译名:《IEEE电子器件学会杂志》),ISSN:2168-6734,EISSN:2168-6734,是Institute of Electrical and Electronics Engineers Inc.出版的国际性学术期刊,创刊于2013年,以1 issue/year形式稳定发行,2026年总发文量约179篇。该刊采用OA开放访问,学科归属为Biochemistry, Genetics and Molecular Biology - Biotechnology。该刊是工程技术、工程电子与电气领域的国际权威刊物,已被SCI(科学引文索引)、SCIE(科学引文索引扩展版)、EI(工程索引)等国际主流学术数据库收录。2026年期刊影响因子达2.9,2025年期刊CiteScore为4.8,2025年期刊自引率约3.4%,在中科院期刊分区体系中位列工程技术大类3区,在所属学科领域具备高学术影响力与国际认可度。Ieee Journal Of The Electron Devices Society长期聚焦工程技术、工程电子与电气及相关产业的技术应用前沿,平均审稿周期9 Weeks,审稿流程高效稳定。在稿件录用评判中,该刊将创新性与前沿性作为核心遴选标准,重点收录能够对工程技术、工程电子与电气领域的落地与发展产生实质性推动价值的研究成果。

从全球发文格局来看,CHINA MAINLANDUSA、Taiwan、South Korea、Japan、India、France等为核心发文国家与地区;NATIONAL YANG MING CHIAO TUNG UNIVERSITYINDIAN INSTITUTE OF TECHNOLOGY SYSTEM (IIT SYSTEM)、CHINESE ACADEMY OF SCIENCES、ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE、NATIONAL TSING HUA UNIVERSITY、UNIVERSITY OF ELECTRONIC SCIENCE & TECHNOLOGY OF CHINA、NATIONAL CHENG KUNG UNIVERSITY等高校与科研机构是期刊的主要发文单位。

期刊评价

名词解释:

影响因子(Impact Factor, IF):指该期刊前两年发表的文章,在第三年的平均被引用次数。它反映了期刊的近期平均影响力和热度。

中科院分区:中科院分区表是国内主流的学术期刊分级评价工具,核心意义是建立跨学科可比的统一评价标尺,为职称评审、学位授予、科研立项等科研管理工作提供标准化量化依据,同时帮助科研人员筛选优质期刊、规避学术风险,适配国内本土化的科研评价需求。

期刊分区表

《新锐期刊分区表》(2026年3月发布)

大类学科 小类学科 Top期刊 综述期刊
工程技术
3区
ENGINEERING, ELECTRICAL & ELECTRONIC 工程:电子与电气
3区

期刊分区表(2025年3月升级版)

大类学科 小类学科 Top期刊 综述期刊
工程技术
3区
ENGINEERING, ELECTRICAL & ELECTRONIC 工程:电子与电气
4区

期刊分区表(2023年12月升级版)

大类学科 小类学科 Top期刊 综述期刊
工程技术
3区
ENGINEERING, ELECTRICAL & ELECTRONIC 工程:电子与电气
4区

JCR分区

2025-2026年最新版

按JCI指标学科分区 收录子集 分区 排名 百分位
学科:ENGINEERING, ELECTRICAL & ELECTRONIC SCIE Q2 174 / 369

53

学科:ENGINEERING, ELECTRICAL & ELECTRONIC SCIE Q2 172 / 371

53.77

2023-2024年最新版

按JCI指标学科分区 收录子集 分区 排名 百分位
学科:ENGINEERING, ELECTRICAL & ELECTRONIC SCIE Q3 202 / 352

42.8

学科:ENGINEERING, ELECTRICAL & ELECTRONIC SCIE Q3 179 / 354

49.58


中国学者近期发文

1
Microchannel Cooling for Performance Enhancement of GaN-on-Si HEMT With a Low Rj-a of 13.5 K/

Author:Zhou, Jiajun; Feng, Xin; Zhang, Weihang; Dang, Kui; Zhang, Yachao; Ren, Zeyang; He, Yanjing; Liu, Xianhe; Zhou, Hong; Liu, Zhihong; Hao, Yue; Zhang, Jincheng

Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2026; Vol. 14, Issue , pp. 85-92. DOI: 10.1109/JEDS.2026.3658238

2
Miller-Current Suppressing Technology for False Turn-On Protection of Commercial p-GaN HEMT

Author:Liu, Ziheng; He, Jiayin; Peng, Hongjie; Gao, Ju; Xia, Wenbo; Ao, Chengkang; Wang, Jinyan; Wang, Maojun; Wei, Jin; Xie, Yong

Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2026; Vol. 14, Issue , pp. 113-121. DOI: 10.1109/JEDS.2026.3661537

3
Simulation Study on the Scalability of Channel-All-Around Reconfigurable Field-Effect Transistors With Gate-Controlled Polarit

Author:Huo, Ran; Ou, Shijun; Wu, Zhehao; Zhang, Han; Lv, Bowen; Shao, Yvyang; Ma, Zichao; Zhang, Min; Chan, Mansun; Zhou, Changjian

Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2026; Vol. 14, Issue , pp. 93-101. DOI: 10.1109/JEDS.2026.3659128

4
Research on 4H-SiC Photoconductive Semiconductor Switch Employing Composite Anti-Reflection Coatin

Author:Lv, Haojie; Yu, Xiaoqing; Li, Lun; Zhang, Peiyu

Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2026; Vol. 14, Issue , pp. 137-144. DOI: 10.1109/JEDS.2026.3662337

5
Evaluation of Interface Traps Within Drift Region in LDMOS Using a Multi-Pulse Test Metho

Author:Guo, Qianwen; Cao, Jiawei; Zhou, Ke; Liu, Fang; Zhao, Dongyan; Chen, Yanning; Wu, Bo; Deng, Yongfeng; Gao, Dawei; Ke, Xugang; Li, Junkang; Zhang, Rui

Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2026; Vol. 14, Issue , pp. 145-150. DOI: 10.1109/JEDS.2026.3661617

6
Dynamic Evolution of Hydrogen in IGZO Transistors for PBTI Improvement by Low-Temperature Atmosphere Annealin

Author:Xiang, Liang; Yan, Gangping; Yang, Hong; Yang, Shangbo; Xu, Gaobo; Sun, Mingyang; Wang, Guilei; Yin, Huaxiang; Wang, Xiaolei; Luo, Jun; Wang, Wenwu

Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2026; Vol. 14, Issue , pp. 30-35. DOI: 10.1109/JEDS.2025.3642582

7
Understanding Frequency Dependence of Trap Generation Under AC Positive Bias Temperature Instability Stress in Si n-FinFET

Author:Shi, Yunfei; Chang, Hao; Yang, Hong; Zhang, Qiangzhu; Liu, Qianqian; Tang, Bo; Zhou, Longda; Ji, Zhigang; Li, Junjie; He, Xiaobin; Li, Junfeng; Yin, Huaxiang; Wang, Xiaolei; Luo, Jun; Wang, Wenwu

Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2025; Vol. 13, Issue , pp. 450-455. DOI: 10.1109/JEDS.2025.3567049

8
Impact of the Schottky Barrier Height on the Carrier Velocity Overshoot Behaviors in SOI nMOSFETs With Metal Source/Drai

Author:Su, Rui; Jing, Yan; Zhang, Xinyi; Jiang, Yi; Gao, Dawei; Schwarzenbach, Walter; Nguyen, Bich-Yen; Li, Junkang; Robertson, John; Zhang, Rui

Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2025; Vol. 13, Issue , pp. 464-470. DOI: 10.1109/JEDS.2025.3569242

9
Optimize Gate-All-Around Devices Using Wide Neural Network-Enhanced Bayesian Optimizatio

Author:Shen, Jiaye; Li, Zhiqiang; Yao, Zhenjie

Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2025; Vol. 13, Issue , pp. 456-463. DOI: 10.1109/JEDS.2025.3569528

10
A Non-Linear Partial Differential Equation Solver Based on Analog Memristor Crossbar Array

Author:Ye, Jiabao; Chen, Bing; Xu, Nuo; Zhou, Jiantao; Mu, Rongjun; Du, Chao; Lu, Wei D

Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2025; Vol. 13, Issue , pp. 477-484. DOI: 10.1109/JEDS.2025.3573409


在线咨询

Ieee Journal Of The Electron Devices Society

国际简称:IEEE J ELECTRON DEVI参考译名:IEEE电子器件学会杂志

年发文量:179 CiteScore:4.8 是否预警:否 Gold OA文章占比:100.00% 研究类文章占比:100.00%

杂志社联系方式:445 HOES LANE, PISCATAWAY, USA, NJ, 08855-4141

Ieee Journal Of The Electron Devices Society