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|---|---|
| CHINA MAINLAND | 498 |
| USA | 215 |
| South Korea | 156 |
| GERMANY (FED REP GER) | 116 |
| Japan | 62 |
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| Italy | 43 |
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文章引用情况
1
Sub 10 nm Bilayer Bi2O2Se Transistors2
Quantized Conduction Device with 6-Bit Storage Based on Electrically Controllable Break Junctions3
Artificial Neural Network (ANN) to Spiking Neural Network (SNN) Converters Based on Diffusive Memristors4
Cold-Sintered C0G Multilayer Ceramic Capacitors5
P-Type SnO Thin Film Phototransistor with Perovskite-Mediated Photogating6
Wafer Scale Transfer of Ultrathin Silicon Chips on Flexible Substrates for High Performance Bendable Systems7
A Fully Transparent, Flexible, Sensitive, and Visible-Blind Ultraviolet Sensor Based on Carbon Nanotube-Graphene Hybrid8
Electric Field-Induced Magnetization Rotation in Magnetoelectric Multiferroic Fluids9
The Role of Ordering on the Thermoelectric Properties of Blends of Regioregular and Regiorandom Poly(3-hexylthiophene)10
Processes and Effects of Oxygen and Moisture in Resistively Switching TaOx and HfOx