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Advanced Electronic Materials

Advanced Electronic Materials杂志,由Wiley-VCH Verlag出版,于2015年创刊,12 issues/year,出版语言English,ISSN:2199-160X,E-ISSN:2199-160X。

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Advanced Electronic Materials
Advanced Electronic Materials
Advanced Electronic Materials
SCI SCIE EI

杂志介绍

JCR分区
Q1
中科院分区
3区
影响因子
5.9
CiteScore
9.9
期刊收录
SCI、SCIE、EI

Advanced Electronic Materials(中文译名:《先进电子材料》),ISSN:2199-160X,EISSN:2199-160X,是Wiley-VCH Verlag出版的国际性学术期刊,创刊于2015年,以12 issues/year形式稳定发行,2026年总发文量约401篇。该刊采用非OA开放访问,学科归属为NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE - MATERIALS SCIENCE, MULTIDISCIPLINARY。该刊是材料科学、纳米科技领域的国际权威刊物,已被SCI(科学引文索引)、SCIE(科学引文索引扩展版)、EI(工程索引)等国际主流学术数据库收录。2026年期刊影响因子达5.9,2025年期刊CiteScore为9.9,2025年期刊自引率约3.4%,在中科院期刊分区体系中位列材料科学大类3区,在所属学科领域具备高学术影响力与国际认可度。Advanced Electronic Materials长期聚焦材料科学、纳米科技及相关产业的技术应用前沿,平均审稿周期10 Weeks,审稿流程高效稳定。在稿件录用评判中,该刊将创新性与前沿性作为核心遴选标准,重点收录能够对材料科学、纳米科技领域的落地与发展产生实质性推动价值的研究成果。

从全球发文格局来看,CHINA MAINLANDUSA、South Korea、GERMANY (FED REP GER)、Japan、England、Italy等为核心发文国家与地区;

期刊评价

名词解释:

影响因子(Impact Factor, IF):指该期刊前两年发表的文章,在第三年的平均被引用次数。它反映了期刊的近期平均影响力和热度。

中科院分区:中科院分区表是国内主流的学术期刊分级评价工具,核心意义是建立跨学科可比的统一评价标尺,为职称评审、学位授予、科研立项等科研管理工作提供标准化量化依据,同时帮助科研人员筛选优质期刊、规避学术风险,适配国内本土化的科研评价需求。

期刊分区表

《新锐期刊分区表》(2026年3月发布)

大类学科 小类学科 Top期刊 综述期刊
材料科学
3区
NANOSCIENCE & NANOTECHNOLOGY 纳米科技 MATERIALS SCIENCE, MULTIDISCIPLINARY 材料科学:综合 PHYSICS, APPLIED 物理:应用
3区 3区 2区

期刊分区表(2025年3月升级版)

大类学科 小类学科 Top期刊 综述期刊
材料科学
3区
PHYSICS, APPLIED 物理:应用 MATERIALS SCIENCE, MULTIDISCIPLINARY 材料科学:综合 NANOSCIENCE & NANOTECHNOLOGY 纳米科技
2区 3区 3区

期刊分区表(2023年12月升级版)

大类学科 小类学科 Top期刊 综述期刊
材料科学
2区
PHYSICS, APPLIED 物理:应用 MATERIALS SCIENCE, MULTIDISCIPLINARY 材料科学:综合 NANOSCIENCE & NANOTECHNOLOGY 纳米科技
2区 3区 3区

JCR分区

2025-2026年最新版

按JCI指标学科分区 收录子集 分区 排名 百分位
学科:MATERIALS SCIENCE, MULTIDISCIPLINARY SCIE Q2 146 / 472

69.2

学科:NANOSCIENCE & NANOTECHNOLOGY SCIE Q2 55 / 148

63.2

学科:PHYSICS, APPLIED SCIE Q1 42 / 191

78.3

学科:MATERIALS SCIENCE, MULTIDISCIPLINARY SCIE Q2 159 / 473

66.49

学科:NANOSCIENCE & NANOTECHNOLOGY SCIE Q2 53 / 148

64.53

学科:PHYSICS, APPLIED SCIE Q2 57 / 191

70.42

2023-2024年最新版

按JCI指标学科分区 收录子集 分区 排名 百分位
学科:MATERIALS SCIENCE, MULTIDISCIPLINARY SCIE Q2 122 / 438

72.3

学科:NANOSCIENCE & NANOTECHNOLOGY SCIE Q2 46 / 140

67.5

学科:PHYSICS, APPLIED SCIE Q1 42 / 179

76.8

学科:MATERIALS SCIENCE, MULTIDISCIPLINARY SCIE Q2 126 / 438

71.35

学科:NANOSCIENCE & NANOTECHNOLOGY SCIE Q2 46 / 140

67.5

学科:PHYSICS, APPLIED SCIE Q2 48 / 179

73.46


中国学者近期发文

1
Phase-Transition-Controlled Modulation of Spin-Orbit Torques in VO2-Based Heterostructures by Orbital Hall Effec

Author:Liu, Ye; Wu, Yong; Xie, Xiaoqian; Zhang, Jie; Li, Ang; Meng, Kangkang; Zhang, Delin; Chen, Jikun; Xu, Xiaoguang; Jiang, Yong

Journal: ADVANCED ELECTRONIC MATERIALS. 2026; Vol. 12, Issue 8, pp. -. DOI: 10.1002/aelm.70382

2
Robust and Compatible Ferroelectric Memories with Polycrystalline TiO2 Channel for 3D Integratio

Author:Song, Xujin; Yu, Chenxi; Li, Shangze; Sun, Dijiang; Zhang, Jiajia; Zhu, Haotong; Xiao, Xiaomin; Qin, Xionghao; Liu, Xiaoyan; Zhang, Xing; Kang, Jinfeng

Journal: ADVANCED ELECTRONIC MATERIALS. 2026; Vol. , Issue , pp. -. DOI: 10.1002/aelm.202500774

3
Array-Level Characterization of Cryogenic RRA

Author:Lu, Yuyao; Hu, Ruofei; Jiang, Zhixing; Xu, Feng; Gao, Bin; Tang, Jianshi; Qian, He; Wu, Huaqiang

Journal: ADVANCED ELECTRONIC MATERIALS. 2026; Vol. , Issue , pp. -. DOI: 10.1002/aelm.202500878

4
Low-Temperature Annealed Cu/Al Bilayer Architecture for Highly Stable Flexible Metal-Mesh Transparent Electrode

Author:Shu, Yourong; Liu, Ruiyao; Wu, Peng; Di, Yongjiang; He, Huichao; Yang, Qian; Wang, Wenrong; Jiang, Hanmei; Han, Tao; Meng, Lijian; Ruan, Haibo; Tang, Sheng

Journal: ADVANCED ELECTRONIC MATERIALS. 2026; Vol. , Issue , pp. -. DOI: 10.1002/aelm.202600007

5
Enhanced Resistive Switching Uniformity in Tantalum Oxide Memristor Devices via Copper Implantatio

Author:Chen, Shaochuan; Valov, Ilia

Journal: ADVANCED ELECTRONIC MATERIALS. 2026; Vol. , Issue , pp. -. DOI: 10.1002/aelm.202600002

6
Oxygen Vacancies Driven Photoconductivity in Layered Cobaltite Epitaxial Film

Author:Chen, Yanbin; Liu, Yiqun; Xu, Xing; Ma, Jing; Nan, Ce-wen; Chen, Chonglin

Journal: ADVANCED ELECTRONIC MATERIALS. 2026; Vol. , Issue , pp. -. DOI: 10.1002/aelm.202500566

7
CsPbBr3-Nanodiamonds Hybrid Wafers for Mechanically Robust, High-Performance X-Ray Detectio

Author:Gong, Yanan; Xu, Zhuangjie; Zhu, Weidong; Zhang, Xiaoxuan; Wang, Zihao; Ren, Zeyang; Ba, Yanshuang; Xi, He; Li, Zhimin; Zhang, Chunfu; Zhang, Jincheng; Hao, Yue

Journal: ADVANCED ELECTRONIC MATERIALS. 2026; Vol. , Issue , pp. -. DOI: 10.1002/aelm.70406

8
Ultra-Low Power Consumption and Highly Durability in Sm:HfO2 Thin Film Ferroelectric Memristor for Edge Detectio

Author:Li, Tengyu; Wang, Yongrui; Zhang, Weifeng; Xu, Jikang; Yan, Xiaobing

Journal: ADVANCED ELECTRONIC MATERIALS. 2026; Vol. , Issue , pp. -. DOI: 10.1002/aelm.202500819

9
Topological Materials and Related Application

Author:Grazianetti, Carlo; Mantovan, Roberto; Longo, Emanuele; Zandvliet, Harold J. W.; Bampoulis, Pantelis; Pan, Yu; Li, Fan; Wang, Xia; Downey, Payton; Molle, Alessandro

Journal: ADVANCED ELECTRONIC MATERIALS. 2026; Vol. , Issue , pp. -. DOI: 10.1002/aelm.202500832

10
Non-volatile Sliding Ferroelectric Memory Effect in Ultrathin γ-InS

Author:Li, Yue; Ding, Luoyang; Li, Zhixiong; Chen, Feng; Weng, Xiaoyao; Zhu, Min; Wan, Siyuan; Zhou, Yangbo

Journal: ADVANCED ELECTRONIC MATERIALS. 2026; Vol. , Issue , pp. -. DOI: 10.1002/aelm.70313


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Advanced Electronic Materials

国际简称:ADV ELECTRON MATER参考译名:先进电子材料

年发文量:401 CiteScore:9.9 是否预警:否 Gold OA文章占比:100.00% 研究类文章占比:91.02%

杂志社联系方式:111 RIVER ST, HOBOKEN, USA, NJ, 07030-5774

Advanced Electronic Materials