发文地区与机构
近年国家 / 地区发文量统计
| 国家 / 地区 | 发文量 |
|---|---|
| USA | 52 |
| CHINA MAINLAND | 51 |
| India | 50 |
| Taiwan | 35 |
| France | 20 |
| Italy | 18 |
| Belgium | 15 |
| Austria | 14 |
| Japan | 13 |
| GERMANY (FED REP GER) | 12 |
近年机构发文量统计
| 机构 | 发文量 |
|---|---|
| INDIAN INSTITUTE OF TECHNOLOGY SYSTEM (... | 23 |
| IMEC | 15 |
| CENTRE NATIONAL DE LA RECHERCHE SCIENTI... | 14 |
| STMICROELECTRONICS | 10 |
| TECHNISCHE UNIVERSITAT WIEN | 9 |
| NATIONAL TSING HUA UNIVERSITY | 8 |
| NATIONAL YANG MING CHIAO TUNG UNIVERSIT... | 8 |
| COMMUNAUTE UNIVERSITE GRENOBLE ALPES | 7 |
| GLOBALFOUNDRIES | 7 |
| CHINESE ACADEMY OF SCIENCES | 6 |
文章引用情况
1
Efficient Output Power Enhancement and Protection Technique for Hot Spotted Solar Photovoltaic Modules2
Life Model of the Electrochemical Migration Failure of Printed Circuit Boards Under NaCl Solution3
Probing Plasticity and Strain-Rate Effects of Indium Submicron Pillars Using Synchrotron Laue X-Ray Microdiffraction4
Temporally- and Spatially-Resolved Observations of Current Filament Dynamics in Insulated Gate Bipolar Transistor Chip During Avalanche Breakdown5
Self-Heating Assessment on Bulk FinFET Devices Through Characterization and Predictive Simulation6
Failure Mode and Mechanism Analysis for Cu Wire Bond on Cu/Low-k Chip by Wire Pull Test and Finite-Element Analysis7
The Impact of Fin Number on Device Performance and Reliability for Multi-Fin Tri-Gate n- and p-Type FinFET8
Analysis of the Significant Rise in Breakdown Voltage of GaN HEMTs From Near-Threshold to Deep Off-State Gate Bias Conditions9
Circuit-Level Technique to Design Variation- and Noise-Aware Reliable Dynamic Logic Gates10
Elimination of Scallop-Induced Stress Fluctuation on Through-Silicon-Vias (TSVs) by Employing Polyimide Liner