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Ieee Transactions On Device And Materials Reliability

Ieee Transactions On Device And Materials Reliability杂志,由Institute of Electrical and Electronics Engineers Inc.出版,于2001年创刊,Quarterly,出版语言English,ISSN:1530-4388,E-ISSN:1558-2574。

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Ieee Transactions On Device And Materials Reliability
Ieee Transactions On Device And Materials Reliability
Ieee Transactions On Device And Materials Reliability
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发文地区与机构

近年国家 / 地区发文量统计

国家 / 地区 发文量
USA 52
CHINA MAINLAND 51
India 50
Taiwan 35
France 20
Italy 18
Belgium 15
Austria 14
Japan 13
GERMANY (FED REP GER) 12

近年机构发文量统计

机构 发文量
INDIAN INSTITUTE OF TECHNOLOGY SYSTEM (... 23
IMEC 15
CENTRE NATIONAL DE LA RECHERCHE SCIENTI... 14
STMICROELECTRONICS 10
TECHNISCHE UNIVERSITAT WIEN 9
NATIONAL TSING HUA UNIVERSITY 8
NATIONAL YANG MING CHIAO TUNG UNIVERSIT... 8
COMMUNAUTE UNIVERSITE GRENOBLE ALPES 7
GLOBALFOUNDRIES 7
CHINESE ACADEMY OF SCIENCES 6

文章引用情况

1
Efficient Output Power Enhancement and Protection Technique for Hot Spotted Solar Photovoltaic Modules

引用次数:3

2
Life Model of the Electrochemical Migration Failure of Printed Circuit Boards Under NaCl Solution

引用次数:2

3
Probing Plasticity and Strain-Rate Effects of Indium Submicron Pillars Using Synchrotron Laue X-Ray Microdiffraction

引用次数:2

4
Temporally- and Spatially-Resolved Observations of Current Filament Dynamics in Insulated Gate Bipolar Transistor Chip During Avalanche Breakdown

引用次数:2

5
Self-Heating Assessment on Bulk FinFET Devices Through Characterization and Predictive Simulation

引用次数:2

6
Failure Mode and Mechanism Analysis for Cu Wire Bond on Cu/Low-k Chip by Wire Pull Test and Finite-Element Analysis

引用次数:2

7
The Impact of Fin Number on Device Performance and Reliability for Multi-Fin Tri-Gate n- and p-Type FinFET

引用次数:2

8
Analysis of the Significant Rise in Breakdown Voltage of GaN HEMTs From Near-Threshold to Deep Off-State Gate Bias Conditions

引用次数:2

9
Circuit-Level Technique to Design Variation- and Noise-Aware Reliable Dynamic Logic Gates

引用次数:2

10
Elimination of Scallop-Induced Stress Fluctuation on Through-Silicon-Vias (TSVs) by Employing Polyimide Liner

引用次数:2