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Ieee Transactions On Device And Materials Reliability

Ieee Transactions On Device And Materials Reliability杂志,由Institute of Electrical and Electronics Engineers Inc.出版,于2001年创刊,Quarterly,出版语言English,ISSN:1530-4388,E-ISSN:1558-2574。

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Ieee Transactions On Device And Materials Reliability
Ieee Transactions On Device And Materials Reliability
Ieee Transactions On Device And Materials Reliability
SCI SCIE EI

杂志介绍

JCR分区
Q3
中科院分区
3区
影响因子
2.7
CiteScore
4.6
期刊收录
SCI、SCIE、EI

Ieee Transactions On Device And Materials Reliability(中文译名:《IEEE Transactions on Device and Materials Reliability》),ISSN:1530-4388,EISSN:1558-2574,是Institute of Electrical and Electronics Engineers Inc.出版的国际性学术期刊,创刊于2001年,以Quarterly形式稳定发行,2026年总发文量约112篇。该刊采用非OA开放访问,学科归属为工程技术 - 工程:电子与电气。该刊是工程技术、工程电子与电气领域的国际权威刊物,已被SCI(科学引文索引)、SCIE(科学引文索引扩展版)、EI(工程索引)等国际主流学术数据库收录。2026年期刊影响因子达2.7,2025年期刊CiteScore为4.6,2025年期刊自引率约7.4%,在中科院期刊分区体系中位列工程技术大类3区,在所属学科领域具备高学术影响力与国际认可度。Ieee Transactions On Device And Materials Reliability长期聚焦工程技术、工程电子与电气及相关产业的技术应用前沿,平均审稿周期较慢,6-12周,审稿流程高效稳定。在稿件录用评判中,该刊将创新性与前沿性作为核心遴选标准,重点收录能够对工程技术、工程电子与电气领域的落地与发展产生实质性推动价值的研究成果。

从全球发文格局来看,USACHINA MAINLAND、India、Taiwan、France、Italy、Belgium等为核心发文国家与地区;INDIAN INSTITUTE OF TECHNOLOGY SYSTEM (IIT SYSTEM)IMEC、CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS)、STMICROELECTRONICS、TECHNISCHE UNIVERSITAT WIEN、NATIONAL TSING HUA UNIVERSITY、NATIONAL YANG MING CHIAO TUNG UNIVERSITY等高校与科研机构是期刊的主要发文单位。

期刊评价

名词解释:

影响因子(Impact Factor, IF):指该期刊前两年发表的文章,在第三年的平均被引用次数。它反映了期刊的近期平均影响力和热度。

中科院分区:中科院分区表是国内主流的学术期刊分级评价工具,核心意义是建立跨学科可比的统一评价标尺,为职称评审、学位授予、科研立项等科研管理工作提供标准化量化依据,同时帮助科研人员筛选优质期刊、规避学术风险,适配国内本土化的科研评价需求。

期刊分区表

《新锐期刊分区表》(2026年3月发布)

大类学科 小类学科 Top期刊 综述期刊
工程技术
3区
ENGINEERING, ELECTRICAL & ELECTRONIC 工程:电子与电气 PHYSICS, APPLIED 物理:应用
3区 3区

期刊分区表(2025年3月升级版)

大类学科 小类学科 Top期刊 综述期刊
工程技术
3区
ENGINEERING, ELECTRICAL & ELECTRONIC 工程:电子与电气 PHYSICS, APPLIED 物理:应用
3区 3区

期刊分区表(2023年12月升级版)

大类学科 小类学科 Top期刊 综述期刊
工程技术
3区
ENGINEERING, ELECTRICAL & ELECTRONIC 工程:电子与电气 PHYSICS, APPLIED 物理:应用
3区 3区

JCR分区

2025-2026年最新版

按JCI指标学科分区 收录子集 分区 排名 百分位
学科:ENGINEERING, ELECTRICAL & ELECTRONIC SCIE Q3 186 / 369

49.7

学科:PHYSICS, APPLIED SCIE Q3 107 / 191

44.2

学科:ENGINEERING, ELECTRICAL & ELECTRONIC SCIE Q3 193 / 371

48.11

学科:PHYSICS, APPLIED SCIE Q2 93 / 191

51.57

2024-2025年最新版

按JCI指标学科分区 收录子集 分区 排名 百分位
学科:ENGINEERING, ELECTRICAL & ELECTRONIC SCIE Q3 198 / 368

46.3

学科:PHYSICS, APPLIED SCIE Q3 114 / 187

39.3

学科:ENGINEERING, ELECTRICAL & ELECTRONIC SCIE Q3 192 / 368

47.96

学科:PHYSICS, APPLIED SCIE Q3 99 / 187

47.33


中国学者近期发文

1
Drain Field Plate Effects in p-GaN HEMTs During Surge Voltage Hard Switchin

Author:Zhou, Jinggui; Lei, Juan; Liu, Yuqi; Li, Xuan; Zhou, Qi; Zhang, Bo

Journal: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. 2026; Vol. 26, Issue 1, pp. 309-314. DOI: 10.1109/TDMR.2026.3652854

2
Design and Fabrication of FS-IGBTs With Enhanced Ruggedness and the Influence of Circuit Parameters on Short-Circui

Author:Zhang, Jingping; Luo, Houcai; Wu, Huan; Zheng, Bofeng; Zhang, Guoqi; Chen, Xianping

Journal: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. 2026; Vol. 26, Issue 1, pp. 9-16. DOI: 10.1109/TDMR.2025.3562558

3
Remaining Useful Life Prediction of Electrolytic Capacitors Incorporating Data-Driven and Model-Based Method

Author:Yi, Jianmin; Wang, Hao; Ma, Cunbao

Journal: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. 2026; Vol. 26, Issue 1, pp. 334-342. DOI: 10.1109/TDMR.2026.3666475

4
TCAD Investigation on a Novel SiC Trench MOSFET With Integrated N+-PolySi/SiC Heterojunction Diode for Improved Third-Quadrant and High-Temperature Performance

Author:Yi, Bo; Zhang, Gaolei; Wu, Xinyi; Li, Huan; Cheng, Junji; Huang, Haimeng; Kong, Moufu; Yang, Hongqiang

Journal: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. 2026; Vol. 26, Issue 1, pp. 17-23. DOI: 10.1109/TDMR.2025.3641286

5
Comparative Study on the Performance of Digital Low-Light EBAPS Devices Based on Different Multi-Alkali Photocathode Material

Author:Yang, Shiqi; Pang, Hongli; Li, Junqi; Deng, Huabing; Cheng, Xue; Gao, Yuyong; Deng, Changbao; Li, Yaobin; Hu, Liangxing

Journal: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. 2026; Vol. 26, Issue 1, pp. 54-58. DOI: 10.1109/TDMR.2025.3635580

6
Radiation-Hardened SRAM Designs for Self-Recovery From all Single- and Double-Node Upset

Author:Yan, Aibin; Li, Jinpeng; Li, Kun; Wang, Wenhao; Huang, Zhengfeng; Ni, Tianming; Wang, Qijun; Girard, Patrick; Wen, Xiaoqing

Journal: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. 2026; Vol. 26, Issue 1, pp. 167-177. DOI: 10.1109/TDMR.2025.3641827

7
Package-Level Electro-Thermal Simulation With Transient Thermal Resistance Model for Surge Stress Failure Analysis of SiC MOSFE

Author:Xiang, Zaiman; Luo, Tao; Wang, Wenbo; Sun, Bo; Sun, Botao; Zhang, Qingchun; Zhang, Guoqi; Fan, Jiajie

Journal: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. 2026; Vol. 26, Issue 1, pp. 42-53. DOI: 10.1109/TDMR.2026.3655032

8
SiC MOSFET Gate-Oxide and SiC/SiO2 Interface Defect Charge Movement Based on the Hi-Lo CISS-VG Method Under HTGB Stres

Author:Xia, Ziming; Li, Zehong; Zhang, Anna; Zhang, Xin; Zhao, Yishang; Yang, Yang; Wang, Tongyang; Zheng, Yige; Zhao, Longjie; Cui, Yanyun; Xiao, Li; Ren, Min

Journal: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. 2026; Vol. 26, Issue 1, pp. 24-30. DOI: 10.1109/TDMR.2026.3652851

9
Simulation of the Single-Event Burnout in Lateral Enhancement-Mode β-Ga2O3 MOSFET Device

Author:Wang, Zefeng; Liu, Fengkai; Liu, Zhongli; Cao, Xiangjie; Xu, Xinrui; Bai, Chengmin; Yang, Jianqun; Li, Xingji

Journal: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. 2026; Vol. 26, Issue 1, pp. 351-357. DOI: 10.1109/TDMR.2026.3658196

10
Characterizing Threshold Voltage Drift of BTI Stress in SiC MOSFET From First-Principle Calculation

Author:Wang, Guibao; Wan, Pudong; Yu, Miao; Pang, Tiqiang; Zhang, Zihan; Zhang, Yuming; Peng, Bo; Yuan, Lei; Jia, Renxu

Journal: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. 2026; Vol. 26, Issue 1, pp. 178-183. DOI: 10.1109/TDMR.2026.3659921


在线咨询

Ieee Transactions On Device And Materials Reliability

国际简称:IEEE T DEVICE MAT RE参考译名:IEEE Transactions on Device and Materials Reliability

年发文量:112 CiteScore:4.6 是否预警:否 Gold OA文章占比:1.55% 研究类文章占比:100.00%

杂志社联系方式:IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 445 HOES LANE, PISCATAWAY, USA, NJ, 08855-4141

Ieee Transactions On Device And Materials Reliability