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Microelectronics Reliability

Microelectronics Reliability杂志,由Elsevier Ltd出版,于1964年创刊,Monthly,出版语言English,ISSN:0026-2714,E-ISSN:1872-941X。

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Microelectronics Reliability
Microelectronics Reliability
Microelectronics Reliability
SCI SCIE EI

杂志介绍

JCR分区
Q3
中科院分区
4区
影响因子
2.5
CiteScore
4.5
期刊收录
SCI、SCIE、EI

Microelectronics Reliability(中文译名:《微电子可靠性》),ISSN:0026-2714,EISSN:1872-941X,是Elsevier Ltd出版的国际性学术期刊,创刊于1964年,以Monthly形式稳定发行,2026年总发文量约303篇。该刊采用非OA开放访问,学科归属为工程技术 - 工程:电子与电气。该刊是工程技术、工程电子与电气领域的国际权威刊物,已被SCI(科学引文索引)、SCIE(科学引文索引扩展版)、EI(工程索引)等国际主流学术数据库收录。2026年期刊影响因子达2.5,2025年期刊CiteScore为4.5,2025年期刊自引率约12%,在中科院期刊分区体系中位列工程技术大类4区,在所属学科领域具备高学术影响力与国际认可度。Microelectronics Reliability长期聚焦工程技术、工程电子与电气及相关产业的技术应用前沿,平均审稿周期较快,2-4周,审稿流程高效稳定。在稿件录用评判中,该刊将创新性与前沿性作为核心遴选标准,重点收录能够对工程技术、工程电子与电气领域的落地与发展产生实质性推动价值的研究成果。

期刊评价

名词解释:

影响因子(Impact Factor, IF):指该期刊前两年发表的文章,在第三年的平均被引用次数。它反映了期刊的近期平均影响力和热度。

中科院分区:中科院分区表是国内主流的学术期刊分级评价工具,核心意义是建立跨学科可比的统一评价标尺,为职称评审、学位授予、科研立项等科研管理工作提供标准化量化依据,同时帮助科研人员筛选优质期刊、规避学术风险,适配国内本土化的科研评价需求。

期刊分区表

《新锐期刊分区表》(2026年3月发布)

大类学科 小类学科 Top期刊 综述期刊
工程技术
4区
ENGINEERING, ELECTRICAL & ELECTRONIC 工程:电子与电气 NANOSCIENCE & NANOTECHNOLOGY 纳米科技 PHYSICS, APPLIED 物理:应用
4区 4区 4区

期刊分区表(2025年3月升级版)

大类学科 小类学科 Top期刊 综述期刊
工程技术
3区
PHYSICS, APPLIED 物理:应用 ENGINEERING, ELECTRICAL & ELECTRONIC 工程:电子与电气 NANOSCIENCE & NANOTECHNOLOGY 纳米科技
3区 4区 4区

期刊分区表(2023年12月升级版)

大类学科 小类学科 Top期刊 综述期刊
工程技术
4区
ENGINEERING, ELECTRICAL & ELECTRONIC 工程:电子与电气 NANOSCIENCE & NANOTECHNOLOGY 纳米科技 PHYSICS, APPLIED 物理:应用
4区 4区 4区

JCR分区

2025-2026年最新版

按JCI指标学科分区 收录子集 分区 排名 百分位
学科:ENGINEERING, ELECTRICAL & ELECTRONIC SCIE Q3 204 / 369

44.9

学科:NANOSCIENCE & NANOTECHNOLOGY SCIE Q3 109 / 148

26.7

学科:PHYSICS, APPLIED SCIE Q3 114 / 191

40.6

学科:ENGINEERING, ELECTRICAL & ELECTRONIC SCIE Q3 266 / 371

28.44

学科:NANOSCIENCE & NANOTECHNOLOGY SCIE Q3 111 / 148

25.34

学科:PHYSICS, APPLIED SCIE Q3 140 / 191

26.96

2024-2025年最新版

按JCI指标学科分区 收录子集 分区 排名 百分位
学科:ENGINEERING, ELECTRICAL & ELECTRONIC SCIE Q3 227 / 368

38.5

学科:NANOSCIENCE & NANOTECHNOLOGY SCIE Q4 120 / 147

18.7

学科:PHYSICS, APPLIED SCIE Q3 134 / 187

28.6

学科:ENGINEERING, ELECTRICAL & ELECTRONIC SCIE Q3 274 / 368

25.68

学科:NANOSCIENCE & NANOTECHNOLOGY SCIE Q4 116 / 147

21.43

学科:PHYSICS, APPLIED SCIE Q3 140 / 187

25.4


中国学者近期发文

1
Research on packaging damage and final failure of large-scale plastic-encapsulated power module under thermal stres

Author:Zhu, Zhanshan; Zhang, Yuexin; Cao, Yang; Cui, Dingyuan; Xiao, Jianxiang; Xu, Min

Journal: MICROELECTRONICS RELIABILITY. 2026; Vol. 181, Issue , pp. -. DOI: 10.1016/j.microrel.2026.116112

2
An analytical-numerical thermal modeling method for multilayer PCBs including lateral surface heat transfe

Author:Zhang, Yabin; Chen, Lin; Luo, Shenyuan

Journal: MICROELECTRONICS RELIABILITY. 2026; Vol. 181, Issue , pp. -. DOI: 10.1016/j.microrel.2026.116120

3
Thermal reliability of 2D materials integrated with silicon-based CMOS ICs and analysis under complex condition

Author:Huang, Jinfeng; Ye, Yuxin; Malik, Muhammad; Anwar, Muhammad Abid; Liu, Guanyu; Zhao, Yuda; Ma, Hanzhi; Yu, Bin; Xu, Yang

Journal: MICROELECTRONICS RELIABILITY. 2026; Vol. 181, Issue , pp. -. DOI: 10.1016/j.microrel.2026.116123

4
Research on evaluation methods of total ionizing radiation on SiC MOSFETs with various dose rates and temperature

Author:Zhang, Dan; Shi, Chengcheng; Liang, Xiaowen; Wei, Ying; Wen, Lin; Song, Yu; Feng, Jie; Yu, Xuefeng; Zhou, Dong; Guo, Qi; Wang, Bo; Li, Yudong

Journal: MICROELECTRONICS RELIABILITY. 2026; Vol. 181, Issue , pp. -. DOI: 10.1016/j.microrel.2026.116126

5
Influence of bonding wire on insulation characteristics of chip termination in high-voltage power electronic device

Author:Qi, Zhaoyuan; Li, Xuebao; Liu, Zhaocheng; Cai, Yumeng; Zheng, Chao; Zhao, Yushan; Sun, Peng; Zhao, Zhibin

Journal: MICROELECTRONICS RELIABILITY. 2026; Vol. 181, Issue , pp. -. DOI: 10.1016/j.microrel.2026.116080

6
Microstructural evolution and mechanical performance of transient liquid phase bonded Ni/Cu foam (Sn-infiltrated)/Ni joint

Author:Pan, Zhen; Wang, Zhihui; Deng, Chaohan; Lian, Xiangyu; Chi, Hongmei

Journal: MICROELECTRONICS RELIABILITY. 2026; Vol. 181, Issue , pp. -. DOI: 10.1016/j.microrel.2026.116122

7
Method for geometric correction of indentation hardness on curved surfaces: Implications for solder joint structure

Author:Xu, Yukun; Song, Shaowei; Li, Xiaozhen; Liu, Haodong; Zhang, Weixu

Journal: MICROELECTRONICS RELIABILITY. 2026; Vol. 181, Issue , pp. -. DOI: 10.1016/j.microrel.2026.116127

8
Design of high failure current embedded dual direction SCR with segmented topology for high-voltage ESD protectio

Author:Xiao, Tao; Yang, Hongjiao; Wang, Yang; Tang, Zhengdong; Wang, Yitao; Chen, Yujie

Journal: MICROELECTRONICS RELIABILITY. 2026; Vol. 181, Issue , pp. -. DOI: 10.1016/j.microrel.2026.116117

9
Thermo-vibration coupled reliability methodology of BGA solder joints considering the preload effect of heat sink bolt

Author:Chen, Yifan; Wei, Xue; Huang, Cai; Chen, Xubin; Zhao, Pengbin; Leng, Wenlong; Zhang, Cong; Ji, Changhua

Journal: MICROELECTRONICS RELIABILITY. 2026; Vol. 181, Issue , pp. -. DOI: 10.1016/j.microrel.2026.116139

10
RCR-Net: An efficient deep learning model for reliable detection of PCB surface defect

Author:Zhang, Luying; Zhang, Linbeizi; Pan, Shangtao; Fu, Bing; Ding, Jiang

Journal: MICROELECTRONICS RELIABILITY. 2026; Vol. 181, Issue , pp. -. DOI: 10.1016/j.microrel.2026.116142


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Microelectronics Reliability

国际简称:MICROELECTRON RELIAB参考译名:微电子可靠性

年发文量:303 CiteScore:4.5 是否预警:否 Gold OA文章占比:17.15% 研究类文章占比:97.69%

杂志社联系方式:PERGAMON-ELSEVIER SCIENCE LTD, THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD, ENGLAND, OX5 1GB

Microelectronics Reliability